NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HP31
█
APPLICATIONS
Mediu�½� Power Linear switching Applications.
█
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation Tc=25℃)
(
……………………………40W
P
C
——Collector
Dissipation(Ta=25℃)……………………………2W
V
CBO
——Collector-Base
Voltage………………………………40V
V
CEO
——Collector-Emitter
Voltage……………………………40V
V
E B O
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current(DC)………………………………………3A
I
C
——Collector
Current(Pulse)……………………………………5A
Ib——Base Current………………………………………………1A
TO-220
1―Base,B
2―Collector,
C
3―Emitter,E
█
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
BV
CEO
Characteristics
Collector-Emitter Breakdown Voltage
Min
40
25
10
50
1.2
1.8
0.3
200
1
3.0
V
V
mA
μA
mA
MHz
Typ
Max
Unit
V
Test Conditions
I
C
=30mA,
I
B
=0
V
CE
=4V, I
C
=1A
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=375mA
V
CE
=4V, I
C
=3A
V
CB
=30V, I
B
=0
V
CE
=40V, V
EB
=0
V
EB
=5V, I
C
=0
V
CE
=10V, I
C
=500mA,f=1MHz
H
FE(1)
*DC Current Gain
H
FE(2)
*DC Current Gain
V
CE(sat)
I
CEO
I
CES
I
EBO
f
T
*Collector- Emitter Saturation Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain-Bandwidth Product
V
BE(ON)
*Base-Emitter On Voltage
*
Pulse Test:PW≤300μs,Duty
cycle≤2%