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HP32 参数 Datasheet PDF下载

HP32图片预览
型号: HP32
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 139 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HP32的Datasheet PDF文件第2页  
PNP S I L I C O N T R AN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HP32
APPLICATIONS
Mediu�½� Power Linear switching Applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation Tc=25���)
……………………………40W
P
C
——Collector
Dissipation(Ta=25℃)……………………………2W
V
CBO
——Collector-Base
Voltage………………………………-40V
V
CEO
——Collector-Emitter
Voltage……………………………-40V
V
E B O
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current(DC)……………………………………-3mA
I
C
——Collector
Current DC)
………………………………………-3A
I
C
——Collector
Current(Pulse)……………………………………-5A
Ib——Base Current………………………………………………-1A
TO-220
1―Base,B
2―Collector,
C
3―Emitter,E
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
BV
CEO
Characteristics
Collector-Emitter Breakdown Voltage
Min
-40
25
10
50
-1.2
-1.8
-0.3
-200
-1
3.0
V
V
mA
μA
mA
MHz
Typ
Max
Unit
V
Test Conditions
I
C
=-30mA,
I
B
=0
V
CE
=-4V, I
C
=-1A
V
CE
=-4V, I
C
=-3A
I
C
=-3A, I
B
=-375mA
V
CE
=-4V, I
C
=-3A
V
CB
=-30V, I
B
=0
V
CE
=-40V, V
EB
=0
V
EB
=-5V, I
C
=0
V
CE
=-10V, I
C
=-500mA,
f=1MHz
H
FE(1)
*DC Current Gain
H
FE(2)
*DC Current Gain
V
CE(sat)
I
CEO
I
CES
I
EBO
f
T
*Collector- Emitter Saturation Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain-Bandwidth Product
V
BE(ON)
*Base-Emitter On Voltage
*
Pulse Test:PW≤300μs,Duty
cycle≤2%