Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N TRANSISTOR
HP50
█ APPLICATIONS
High Voltage And switching.
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
－65~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 40W
V
CBO
——Collector-Base
Voltage………………………… 500V
V
CEO
——Collector-Emitter
Voltage……………………… 400V
V
EBO
——Emitter-Base
Voltage……………………………… 5V
I
C
——Collector
Current DC）
（
……���…………………………
1A
I
C
——Collector
Current（Pulse）………………………………2A
I
B
——Base
Current…………………………………………0.6A
TO-220
1―
Base，B
2―Collector，C
3―Emitter, E
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CEO
I
CEO
I
EBO
I
CES
H
FE（2）
H
FE
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cutoff Current
４００
２２
１０
２０
１０
１
１
１
１５０
１
１．５
Ｖ
I
C
=30mA, I
B
=0
�½�Ａ
V
CE
=300V, I
B
=0
�½�Ａ
V
EB
=5V, I
C
=0
�½�Ａ
V
CE
=500V, V
EB
=0
V
CE
=10V, I
C
=0.3A
Ｖ
Ｖ
V
CE
=10V, I
C
=1A
V
CE
=10V, I
C
=0.2A,f=1ＭＨ�½�
I
C
=1A, I
B
=0.2A
V
CE
=10V, I
C
=1A
Collector Cut-off Current
H
FE（1）
DC Current Gain
V
CE(sat)
Collector- Emitter Saturation Voltage
V
BE(on)
f
T
Ｒ
θＪＣ
Ｒ
θＪＡ
Base-Emitter On Voltage
Current Gain-Bandwidth Product
ＭＨ�½�
V
CE
=10V,I
C
=0.1A,f=2ＭＨ�½�
３．１２５
℃／Ｗ
６２．５
℃／Ｗ
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
