Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R AN S I S T O R
HS1205
█
APPLICATIONS
Large Current Switching
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 10W
P
C
——Collector
Dissipation（T
A
=25℃）…………………… 1W
V
CBO
——Collector-Base
Voltage………………………… -25V
V
CEO
——Collector-Emitter
Voltage……………………… -20V
V
EBO
——Emitter-Base
Voltage…………��………………… -5V
I
C
——Collector
Current………………………………………-5A
1―Base，B
2―Collector，C
3―Emitter，E
TO-126
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
-25
-20
-5
-500
-500
100
60
-250
-1.0
-0.94
320
60
40
200
10
-500
-1.3
-1.2
400
V
V
V
nA
nA
I
C
=-10μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-2V, I
C
=-500mA
V
CE
=-2V, I
C
=-4A
Emitter Cut-off Current
H
FE（1）
DC Current Gain
H
FE（2）
DC Current Gain
V
CE(sat1)
Collector- Emitter Saturation Voltage
V
CE(sat2)
Collector- Emitter Saturation Voltage
V
BE(sat)
f
t
Cob
t
ON
t
STG
t
F
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
mV
V
V
MHz
pF
nS
nS
nS
I
C
=-3A, I
B
=-60mA
I
C
=-3A, I
B
=-60mA
I
C
=-3A, I
B
=-60mA
V
CE
=-5V, I
C
=-200mA,
V
CB
=-10V, I
E
=0，f=1MHz
See specified test circuit
Output Capacitance
Turn-On Time
Storage
Fall Time
Time
█
h
FE
Classification
R
100—200
S
140—280
T
200—400
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
