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HS2236 参数 Datasheet PDF下载

HS2236图片预览
型号: HS2236
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 178 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HS2236的Datasheet PDF文件第2页  
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HS2236
APPLICATIONS
Audio Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation
c
=25℃)
(T
…………………
900mW
V
CBO
——Collector-Base
Voltage………………………… 30V
V
CEO
——Collector-Emitter
Voltage……………………… 30V
V
EBO
——Emitter-Base
Voltage……………………………… 5V
I
C
——Collector
Current………………………………………1.5A
Ib——Base Current…………………………………………0.15A
1―Emitter,E
2―Collector,C
3―Base,B
TO-126
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CEO
BV
EBO
I
EBO
I
CBO
H
FE
V
CE(sat)
V
BE
f
t
Cob
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
30
5
100
100
100
320
2
1
120
30
V
V
nA
nA
V
V
MHz
pF
I
C
=10mA, I
B
=0
I
E
=1mA,I
C
=0
V
EB
=5V, I
C
=0
V
CB
=30V, I
E
=0
V
CE
=2V, I
C
=500mA
I
C
=1.5A, I
B
=0.03A
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=500mA,
V
CB
=10V, I
E
=0,f=1MHz
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
Output Capacitance
h
FE
Classification
O
100—200
Y
160—320