欢迎访问ic37.com |
会员登录 免费注册
发布采购

HS631K 参数 Datasheet PDF下载

HS631K图片预览
型号: HS631K
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 188 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HS631K的Datasheet PDF文件第2页浏览型号HS631K的Datasheet PDF文件第3页  
Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R AN S I S T O R
HS631K
APPLICATIONS
Low frequency power amplifier,Medium Seed switching.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation T
c
=25℃)
………………………
1W
V
CBO
——Collector-Base
Voltage………………………… -120V
V
CEO
——Collector-Emitter
Voltage……………………… -120V
V
EBO
——Emitter-Base
Voltage………………………………-5V
I
C
——Collector
Current………………………………………-1A
1―Emitter,E
2―Collector,C
3―Base,B
TO-126
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
-120
-120
-5
-1
-1
60
20
-0.15
-0.85
100
600
80
110
30
-0.4
-1.2
320
V
V
V
I
C
=-10μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10μA,I
C
=0
μA
V
CB
=-50V, I
E
=0
μA
V
EB
=-4V, I
C
=0
V
CE
=-5V, I
C
=-50mA
V
CE
=-5V, I
C
=-500mA
V
V
nS
nS
nS
MHz
pF
V
CE
=-10V, I
C
=-50mA,
V
CB
=10V, I
E
=0,f=1MHz
See specified test circuit
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
Emitter Cut-off Current
H
FE(1)
DC Current Gain
H
FE(2)
DC Current Gain
V
CE(sat)
V
BE(sat)
t
OFF
t
STG
t
F
f
t
Cob
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn-Off Time
Storage
Fall Time
Current Gain-Bandwidth Product
Time
Output Capacitance
h
FE
Classification
D
60—120
E
100—200
F
160—320