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HS882 参数 Datasheet PDF下载

HS882图片预览
型号: HS882
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 77 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T RAN S I S T O R
HS882
APPLICATIONS
Audio Frequency Power Amplifier , Switching Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 10W
P
C
——Collector
Dissipation(T
A
=25℃)…………………… 1W
V
CBO
——Collector-Base
Voltage………………………… 40V
V
CEO
——Collector-Emitter
Voltage……………………… 30V
V
EBO
——Emitter-Base
Voltage…………………………… 5V
I
C
——Collector
Current(DC)……………………………3A
Ib——Base Current
(DC)………………………………0.6A
1―Emitter,E
2―Collector,C
3―Base,B
TO-126
Electrical Characteristics(T
a
=25℃)
Symbol
I
CBO
I
EBO
h
FE
V
CE
sat
V
BE
(sat)
C
ob
Parameter
Collector-Base Cutoff Current
Emitter- Base Cutoff Current
Min
Typ
Max
Unit
μA
μA
Test Conditions
V
CB
=30V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=1A
1
1
60
0.3
1.0
45
90
400
0.5
2.0
DC Current Gain
Collector- Emitter Saturation Voltage
Base -Emitter
Saturation
Voltage
V
V
pF
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
V
CB
=10V,I
E
=0,f=1MHz
V
CE
=5V,I
E
=0.1A
Output Capacitance
Current Gain-Bandwidth Product
f
T
MHz
h
FE
Classification
R
60—120
Q
100—200
P
160—320
E
200—400