Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSIST OR
HSBD139
█
APPLICATIONS
Medium Power Linear switching Applications
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 12.5W
P
C
——Collector
Dissipation（T
A
=25℃）…………………… 1.25W
V
CBO
——Collector-Base
Voltage…………………………… 80V
V
CEO
——Collector-Emitter
Voltage………………………… 80V
V
EBO
——Emitter-Base
Voltage………………………………… 5V
I
C
——Collector
Current Pulse）
（
…………………………………
3A
I
C
——Collector
Current（DC）……………………………… 1.5A
I
B
——Base
Current………………………………………………0.5A
1―
Emitter, E
2―Collector，C
3―Base，B
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(
sat
)
V
BE(ON)
V
CEO(SUS)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
80
Characteristics
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
25
25
40
250
0.5
1.0
V
V
Min
Typ
Max
0.1
10
Unit
μA
μA
Test Conditions
V
CB
=30V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=5mA
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=150mA
Ic=500mA, I
B
=50mA
Ic=0.5A, V
CE
=2V
Ic=30mA,I
B
=0
█h
FE(3)
Classification
Cassification
6
40~100
10
63~160
16
100~250
h
FE(3)
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
