Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSIST OR
HSBD238
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APPLICATIONS
Medium Power Linear switching Applications
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ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 25W
V
CBO
——Collector-Base
Voltage…………………………… 100V
V
CEO
——Collector-Emitter
Voltage………………………… -80V
V
CER
——Collector-Emitter
Voltage………………………… -100V
V
EBO
——Emitter-Base
Voltage………………………………… -5V
I
C
——Collector
Current
(Pulse)
…………………………………
-6A
I
C
——Collector
Current(DC)……………………………… -2A
1―
Emitter, E
2―Collector,C
3―Base,B
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ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
I
CBO
I
EBO
h
FE(1)
*h
FE(2)
*V
CE(
sat
)
*V
BE(ON)
V
CEO(SUS)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
-80
3
MHz
Characteristics
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
40
25
-0.6
-1.3
V
V
Min
Typ
Max
-100
-1
Unit
μA
mA
Test Conditions
V
CB
=-100V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-2V, I
C
=-150mA
V
CE
=-2V, I
C
=-1A
Ic=-1A, I
B
=-0.1A
Ic=-1A, V
CE
=-2V
Ic=-100mA,I
B
=0
Ic=-250mA, V
CE
=-10V
Current Gain-Bandwidth Product
*
Pulse Test:PW=350μS,Duty Cycle≤1.5% Pulsed