欢迎访问ic37.com |
会员登录 免费注册
发布采购

HSBD234 参数 Datasheet PDF下载

HSBD234图片预览
型号: HSBD234
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 120 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HSBD234
█ APPLICATIONS
Medium Power Linear switching Applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 25W
V
CBO
——Collector-Base
Voltage…………………………… -45V
V
CEO
——Collector-Emitter
Voltage………………………… -45V
V
CER
——Collector-Emitter
Voltage………………………… -45V
V
EBO
——Emitter-Base
Voltage………………………………… -5V
I
C
——Collector
Current
(Pulse)
…………………………………
-6A
I
C
——Collector
Current(DC)……………………………… -2A
1―
Emitter, E
2―Collector,C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Characteristics
Min
Typ
Max
Unit
Test Conditions
Symbol
I
CBO
I
EBO
*H
FE(1)
*H
FE(2)
*V
CE(sat)
*V
BE(on)
V
CEO(sus)
f
t
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
Current Gain-Bandwidth Product
-45
3
40
25
-100
-1
μA
mA
V
CB
=-45V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-2V, I
C
=-150mA
V
CE
=-2V, I
C
=-1A
-0.6
-1.3
V
V
V
MHz
I
C
=-1A, I
B
=-0.1A
V
CE
=-2V, I
C
=-1A
I
C
=-100mA, I
B
=0
V
CE
=-10V, I
C
=-250mA,
*
Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed