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HSBD376 参数 Datasheet PDF下载

HSBD376图片预览
型号: HSBD376
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 235 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HSBD376
█ APPLICATIONS
Medium Power Linear switching Applications
 
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃ 
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 25W
V
CBO
——Collector-Base
Voltage…………………………… -50V
V
CEO
——Collector-Emitter
Voltage………………………… -45V
V
EBO
——Emitter-Base
Voltage………………………………… -5V
1―
Emitter, E
2―Collector,C
3―Base,B
 
I
C
——Collector
Current
(Pulse)
…………………………………
-3A
 
C
I
——Collector
Current(DC)………………………………… -2A
Ib——Base Current………………………………………………-1A
 
█ELECTRICAL
CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
I
CBO
I
EBO
Collector Cut-off Current
Emitter Cut-off Current
 
 
40 
20 
 
 
-45 
-50 
 
 
 
 
 
 
 
 
 
 
50 
500 
-2 
375 
 
-1 
-1.5 
 
 
 
 
μA 
V
CB
=-45V, I
E
=0
 
 
V 
V 
V 
V 
�½�S 
�½�S 
V
CE
=-2V, I
C
=-150mA 
V
CE
=-2V, I
C
=-1A 
I
C
=-1A, I
B
=-0.1A 
V
CE
=-2V, I
C
=-1A
I
C
=-100mA, I
B
=0
I
C
=-100μA, I
E
=0
V
CC
=-30V, I
C
=-0.5A
I
B1
=-I
B2
=-0.05A
-100  μA 
V
EB
=-5V, I
C
=0
*H
FE(1)
 
DC Current Gain 
*H
FE(2)
 
DC Current Gain 
*V
CE(sat)
 
Collector- Emitter Saturation Voltage 
*V
BE(on)
V
CEO(sus)
BV
CBO
t
ON
t
OFF
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Turn-On Time
Turn-Off Time
* P�½��½��½��½� T�½��½��½�:PW=350μS,D�½��½��½� C�½��½��½��½�=2% P�½��½��½��½��½�
█h
FE(3)
Classification
Cassification
6
40~100
10
63~160
16
100~250
25
150~375
h
FE(3)