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HSBD438 参数 Datasheet PDF下载

HSBD438图片预览
型号: HSBD438
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 121 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
Shantou Huashan Electronic Devices Co.,Ltd.
PN P S I L I C O N T R A N S I S T O R
HSBD438
█ APPLICATIONS
Medium Power Linear switching Applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 36W
V
CBO
——Collector-Base
Voltage…………………………… -45V
V
CEO
——Collector-Emitter
Voltage………………………… -45V
V
CES
——Collector-Emitter
Voltage………………………… -45V
V
EBO
——Emitter-Base
Voltage………………………………… -5V
I
C
——Collector
Current
(Pulse)
…………………………………
-7A
I
C
——Collector
Current(DC)………………………………… -4A
I
B
——Base
Current………………………………………………-1A
1―
Emitter, E
2―Collector,C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
I
CBO
I
EBO
h
FE(1)
*h
FE(2)
*h
FE(2)
*V
CE(
sat
)
*V
BE(ON)
V
CEO(SUS)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
-45
3
MHz
Characteristics
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
30
85
40
-0.2
-0.6
-1.2
V
V
140
140
Min
Typ
Max
-100
-1
Unit
μA
mA
Test Conditions
V
CB
=-45V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-5V, I
C
=-10mA
V
CE
=-1V, I
C
=-500mA
V
CE
=-1V, I
C
=-2A
Ic=-2A, I
B
=-0.2A
Ic=-2A, V
CE
=-1V
Ic=-100mA,I
B
=0
Ic=-250mA, V
CE
=-1V
Current Gain-Bandwidth Product
*
Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed