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HSBD442 参数 Datasheet PDF下载

HSBD442图片预览
型号: HSBD442
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 235 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
HSBD442
█ APPLICATIONS
Medium Power Linear switching Applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——J
unction Temperature……………………………… 150℃ 
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 36W
V
CBO
——Collector-Base
Voltage…………………………… -80V
V
CEO
——Collector-Emitter
Voltage………………………… -80V
V
CES
——Collector-Emitter
Voltage………………………… -80V
V
EBO
——Emitter-Base
Voltage………………………………… -5V
1―
Emitter, E
2―Collector,C
3―Base,B
 
I
C
——Collector
Current
(Pulse)
…………………………………
-7A
 
C
——Collector
Current(DC)…………………………………
I
-4A
I
 
B
——Base
Current………………………………………………-1A
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
I
CBO
I
EBO
I
CES
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
 
 
 
15 
40 
15 
 
 
 
-80 
3 
 
 
 
140 
140 
 
 
-0.58 
 
 
 
-100  μA 
V
CB
=-80V, I
E
=0
-1 
 
 
 
-0.8 
 
-1.5 
 
 
�½�A 
V
EB
=-5V, I
C
=0
 
 
 
V 
V 
V 
V 
V
CE
=-5V, I
C
=-10mA 
V
CE
=-1V, I
C
=-500mA 
V
CE
=-1V, I
C
=-2A 
I
C
=-2A, I
B
=-0.2A 
V
CE
=-5V, I
C
=-10mA
V
CE
=-1V, I
C
=-2A
I
C
=-100mA, I
B
=0
-100  μA 
V
CE
=-80V, V
EB
=0
*H
FE(1)
 
DC Current Gain 
*H
FE(2)
 
DC Current Gain 
*H
FE(3)
 
DC Current Gain 
*V
CE(sat)
 
Collector- Emitter Saturation Voltage 
*V
BE(on1)
*V
BE(on2)
V
CEO(sus)
f
t
Base-Emitter On Voltage
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
Current Gain-Bandwidth Product
MH�½� 
V
CE
=-1V, I
C
=-250mA,
* P�½��½��½��½� T�½��½��½�:PW=300μS,D�½��½��½� C�½��½��½��½�=1.5% P�½��½��½��½��½�