Shantou Huashan Electronic Devices Co.,Ltd.
HTF12A60
INSULATED TYPE TRIAC (TO-220F PACKAGE)
█
Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-State Current(I
T(RMS)
=12A)
* High Commutation dv/dt
*Isolation Voltage（V
ISO
=1500V AC）
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General Description
This device is fully isolated package suitable for AC switching application,
phase control application such as fan speed and temperature modulation
control, lighting control and static switching relay.
TO-220F
1
2
█
Absolute Maximum Ratings
（T
a
=25℃）
3
T
stg
——Storage
Temperature…………………………………………………………………
-40~125℃
T
j
——Operating
Junction Temperature
…………………………………………………… -40~125℃
P
GM
——Peak
Gate Power Dissipation………………………………………………………………… 5W
V
DRM
——Repetitive
Peak Off-State Voltage………………………………………………………… 600V
I
T
（
RMS
）——R.M.S
On-State Current（Tc=79℃）………………………………………………… 12A
V
GM
——Peak
Gate Voltage…………………………………………………………………………… 10V
I
GM
——Peak
Gate Current…………………………………………………………………………… 2.0A
I
TSM
——Surge
On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)
………………
119/130A
（R.M.S，
A.C.1minute）
………………………………………1500V
V
ISO
——Isolation
Breakdown Voltage
█
Electrical Characteristics
（T
a
=25℃）
Symbol
I
DRM
V
TM
I+
GT1
I-
GT1
I-
GT3
V+
GT1
V-
GT1
V-
GT3
V
GD
(dv/dt)c
I
H
Rth(j-c)
Items
Repetitive Peak Off-State Current
Peak On-State Voltage
Gate Trigger Current（Ⅰ）
Gate Trigger Current（Ⅱ）
Gate Trigger Current（Ⅲ）
Gate Trigger Voltage（Ⅰ）
Gate Trigger Voltage（Ⅱ）
Gate Trigger Voltage（Ⅲ）
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Holding Current
Thermal Resistance
0.2
10
20
3.3
Min
Max
2.0
1.4
30
30
30
1.5
1.5
1.5
Unit
mA
V
mA
mA
mA
V
V
V
V
V/µS
mA
℃/W
Junction to case
Conditions
V
D
=V
DRM
,Single Phase,Half
Wave, T
J
=125℃
I
T
=20A, Inst. Measurement
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
T
J
=125℃,V
D
=1/2V
DRM
T
J
=125℃,V
D
=2/3V
DRM
(di/dt)c=-6A/ms
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
