Shantou Huashan Electronic Devices Co.,Ltd.
HTF8A60
INSULATED TYPE TRIAC (TO-220F PACKAGE)
█
Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(I
T(RMS)
=8A)
* High Commutation dv/dt
TO-220F
█
General Description
The Triac HTF8A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
1
2
3
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Absolute Maximum Ratings
(T
a
=25℃)
T
stg
——Storage
Temperature………………………………………………………………
-40~125℃
T
j
——Operating
Junction Temperature
…………………………………………………… -40~125℃
P
GM
——Peak
Gate Power Dissipation………………………………………………………………… 5W
V
DRM
——Repetitive
Peak Off-State Voltage………………………………………………………… 600V
I
T
(
RMS
)——R.M.S
On-State Current(Ta=89℃)………………………………………………… 8A
V
G M
——Peak
Gate Voltage………………………………………………………………… 10V
I
GM
——
Peak Gate Current
……………………………………………………………
2.0A
I
TSM
——Surge
On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)…………………… 80/88A
V
ISO
——Isolation
Breakdown Voltage
(RMS.A.C.1
minute)………………………………… 1500V
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Electrical Characteristics
(T
a
=25℃)
Symbol
I
DRM
V
TM
I+
GT1
I-
GT1
I-
GT3
V+
GT1
V-
GT1
V-
GT3
V
GD
(dv/dt)c
I
H
Rth(j-c)
Items
Repetitive Peak Off-State Current
Peak On-State Voltage
Gate Trigger Current(Ⅰ)
Gate Trigger Current(Ⅱ)
Gate Trigger Current(Ⅲ)
Gate Trigger Voltage(Ⅰ)
Gate Trigger Voltage(Ⅱ)
Gate Trigger Voltage(Ⅲ)
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Holding Current
Thermal Resistance
0.2
10
15
3.7
Min.
Typ.
Max.
2.0
1.4
30
30
30
1.5
1.5
1.5
Unit
mA
V
mA
mA
mA
V
V
V
V
V/µS
mA
℃/W
Junction to case
Conditions
VD=VDRM, Single Phase,Half
Wave, TJ=125℃
I
T
=12A, Inst. Measurement
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
T
J
=125℃,V
D
=1/2V
DRM
TJ=125℃,VD=2/3VDRM
(di/dt)c=-4A/ms