Shantou Huashan Electronic Devices Co.,Ltd.
HTN4A60
NON INSULATED TYPE TRIAC (TO-126 PACKAGE)
█
Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(I
T(RMS)
=4A)
* High Commutation dv/dt
█
General Description
The Triac HTN4A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
█
Absolute Maximum Ratings
（T
a
=25℃）
T
stg
——Storage
Temperature…………………………………………………………………
T
j
——Operating
Junction Temperature
……………………………………………………
-
40~125℃
-
40~125℃
P
GM
——Peak
Gate Power Dissipation……………………………………………………………… 1.5W
V
DRM
——Repetitive
Peak Off-State Voltage………………………………………………………… 600V
I
T
（
RMS
）——R.M.S
On-state Current（Ta=66℃）……………………………………………… 4.0A
V
G M
——Peak
Gate Voltage……………………………………………………………… 7.0V
I
GM
——
Peak Gate Current
…………………………………………………………
0.5A
I
TSM
——Surge
On-state Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)……… 30/33A
█
Electrical Characteristics
（T
a
=25℃）
Symbol
I
DRM
Items
Repetitive Peak Off-State Current
Peak On-State Voltage
Gate Trigger Current（Ⅰ）
Gate Trigger Current（Ⅱ）
Gate Trigger Current（Ⅲ）
Gate Trigger Voltage（Ⅰ）
Gate Trigger Voltage（Ⅱ）
Gate Trigger Voltage（Ⅲ）
Non-trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Holding Current
Thermal Resistance
0.2
5.0
Min.
Typ.
Max.
1.0
Unit
mA
Conditions
V
D
=V
DRM
,Single
Phase,
V
TM
I+
GT1
I-
GT1
I-
GT3
V+
GT1
V-
GT1
V-
GT3
V
GD
(dv/dt)c
1.6
20
20
20
1.5
1.5
1.5
V
mA
mA
mA
V
V
V
V
V/µS
Half Wave, T
J
=125℃
I
T
=6A, Inst. Measurement
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
T
J
=125℃,V
D
=1/2V
DRM
T
J
=125℃,V
D
=2/3V
DRM
(di/dt)c=
-
3A/ms
I
H
Rth(j-c)
5.0
3.5
mA
℃/W
Junction to case
HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
