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HX1267 参数 Datasheet PDF下载

HX1267图片预览
型号: HX1267
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 517 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号HX1267的Datasheet PDF文件第2页  
PN P S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
APPLICATIONS
Switching Applications.
HX1267
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………400mW
V
CBO
——Collector-Base
Voltage………………………………-50V
V
CEO
——Collector-Emitter
Voltage……………………………-50V
V
E B O
——Emit
ter-Base Voltage………………………………-5V
I
C
——Collector
Current………………………………………-150mA
I
E
——Emitte
Current……………………………………… 150mA
1―Emitter,E
2―Collector,C
3―Base,B
TO-92S
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
I
EBO
I
CBO
H
FE
 
f
T
Cob
NF
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain 
Current Gain-Bandwidth Product
Output Capacitance
Noise Figure
 
 
 
70 
80 
 
 
 
 
 
 
4.0 
1.0 
-0.1  μA 
V
EB
=-5V, I
C
=0
-0.1  μA 
V
CB
=-50V, I
E
=0
V 
 
I
C
=-100mA, I
B
=-10mA 
V
CE
=-6V, I
C
=-2mA 
400 
 
7.0 
10 
V
CE(sat)
 
Collector- Emitter Saturation Voltage 
-0.1  -0.3 
MH½ 
V
CE
=-10V,I
C
=-1mA
½F 
V
CB
=-10V, I
E
=0,f=1MH½
V =-6V, I
C
=-0.1mA
½B 
CE
f=1KHz,Rg=10KΩ
█ h
FE
Classification
O
 
70—140
Y
120—240
GR
200—400