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HX2785 参数 Datasheet PDF下载

HX2785图片预览
型号: HX2785
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 242 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
APPLICATIONS
Amplifier And Speed Switching
HX2785
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………250mW
V
CBO
——Collector-Base
Voltage………………………………60V
V
CEO
——Collector-Emitter
Voltage……………………………50V
V
E B O
——Emitter
-Base Voltage………………………………5V
I
C
——Collector
Current
……………………………………
100mA
TO-92S
1―Emitter,E
2―Collector,
C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
BV
CEO
I
CBO
I
EBO
50 
 
 
50 
110 
 
 
 
 
 
185 
200 
0.86 
 
V 
I
C
=1mA, I
B
=0 
Emitter
Cut-off Current
0.1  μA 
V
CB
=60V, I
E
=0
0.1  μA 
V
EB
=5V, I
C
=0
 
600 
1 
 
 
V 
V 
V
CE
=6V, I
C
=0.1mA 
V
CE
=6V, I
C
=1mA 
I
C
=100mA, I
B
=10mA
 
I
C
=100mA, I
B
=10mA 
H
FE(1)
 
DC Current Gain 
H
FE(2)
 
DC Current Gain 
V
CE(sat)
 
Collector- Emitter Saturation Voltage 
V
BE(sat)
 
Base-Emitter Saturation Voltage 
V
BE
 
f
T
Cob
 
Base-Emitter Voltage 
Current Gain-Bandwidth Product
0.15  0.3 
Output Capacitance
0.55  0.62  0.65  V 
V
CE
=6V, I
C
=1mA 
150  250  450  MH�½� 
V
CE
=6V, I
C
=10mA
 
3 
4 
�½�F 
V
CB
=6V, I
E
=0,f=1MH�½�
h
FE
Classification
R
110—180   
J
135—220   
H
170—270   
F
200—320   
E
250—400   
K
300—600