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HX3199 参数 Datasheet PDF下载

HX3199图片预览
型号: HX3199
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 114 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HX3199
APPLICATIONS
Small power amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………200mW
V
CBO
——Collector-Base
Voltage………………………………50V
V
CEO
——Collector-Emitter
Voltage……………………………50V
V
EB O
——Emitter-Base
Voltage��……………………………5V
I
C
——Collector
Current……………………………………150mA
TO-92S
1―Emitter,E
2―Collector,
C
3―Base,B
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
I
CBO
I
EBO
H
FE
V
CE(sat)
f
T
Cob
NF
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
50
50
0.1
0.1
70
0.1
80
2.0
1.0
3.5
10
700
0.25
V
V
I
C
=10μA, I
E
=0
I
C
=100μA, I
B
=0
μA
V
CB
=50V, I
E
=0
μA
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
V
MHz
pF
dB
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=10mA
V
CB
=10V, I
E
=0,f=1MHz
V
CE
=6V, I
C
=100μA
f=1KHz,Rg=10KΩ
Emitter
Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Noise Figure
h
FE
Classification
O
70—140
Y
120—240
GR
200—400
BL
350—700