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HX3906 参数 Datasheet PDF下载

HX3906图片预览
型号: HX3906
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 241 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
PN P S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
 
APPLICATIONS
Small Signal Amplifier
;High
Frequency oscillator;Switching Applications.
(complement To H3904)
HX3906
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………300mW
V
CBO
——Collector-Base
Voltage………………………………-40V
V
CEO
——Collector-Emitter
Voltage……………………………-40V
V
E B O
——Emit
ter-Base Voltage………………………………-5V
I
C
——Collector
Current………………………………………-200mA
1―Emitter,E
2―Base,B
3―Collector,C
TO-92S
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
V
CE(sat)
V
BE(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Current Gain-Bandwidth Product
f
T
-40 
-40 
-5 
 
 
70 
 
 
300 
 
 
 
 
 
 
 
 
 
 
 
 
 
-0.1 
-0.1 
350 
-0.25 
-0.85 
 
 
V 
V 
V 
μA 
μA 
 
V 
V 
MH�½� 
=-100μA,I
=0 
=-10�½�A,I
=0 
=-10μA,I
=0 
CB
=-30V, I
=0 
EB
=-5V, I
=0 
CE
=-1V, I
=-10�½�A 
=-10�½�A, I
=-1�½�A 
=-10�½�A, I
=-1�½�A 
CE
=-20V, I
=-10�½�A  
�½�=100MH�½� 
h
FE
Classification
A     
70—240
 
          B 
220—350