Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
KSH13005
█ HIGH VOLTAGE SWITCH MODE APPLICICATION
High Speed Switching
Suitable for Switching Regulator and Montor Control
█
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 75W
V
CBO
——Collector-Base
Voltage…………………………… 700V
V
CEO
——Collector-Emitter
Voltage………………………… 400V
V
EBO
——Emitter-Base
Voltage……………………………… 9V
I
C
——Collector
Current
(DC)
…………………………………
4A
I
C
——Collector
Current Pulse)……………………………… 8A
(
I
B
——Base
Current……………………………………………2A
TO-220
1―
Base,B
2―Collector,C
3―Emitter, E
█ 电参数
(T
a
=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CEO
I
EBO
H
FE
Collector-Emitter Sustaining Voltage
Emitter-Base Cut-off Current
DC Current Gain
400
1
10
8
40
40
0.5
0.6
1
V
mA
I
C
=10mA, I
B
=0
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=2A
V
CE(sat)
Collector- Emitter Saturation Voltage
V
V
V
V
V
pF
MHz
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
I
C
=4A, I
B
=1A
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
V
CB
=10V, f=0.1MHz
V
CE
=10V, I
C
=0.5A
V
CC
=125V,
I
C
=2A,
I
B1
=-I
B2
=0.4A
V
BE(sat)
Base- Emitter Saturation Voltage
Cob
f
T
t
ON
t
S
t
F
Output Capacitance
Current Gain-Bandwidth Product
Turn On Time
Storage Time
Fall Time
4
65
1.2
1.6
0.8
4
0.9
μs
μs
μs
h
FE
Classification: H1
(10--16)
H2
(14--21)
H3
(19--26)
H4
(24--31)
H5
(29--40)