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KSH13009 参数 Datasheet PDF下载

KSH13009图片预览
型号: KSH13009
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 218 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
Shantou Huashan Electronic Devices Co.,Ltd.
N P N S I L I C O N T RANSISTOR
KSH13009
█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching
Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃ 
P
C
——Collector
Dissipation
c
=25℃)
(T
……………………
100W
V
CBO
——Collector-Base
Voltage…………………………… 700V
V
CEO
——Collector-Emitter
Voltage………………………… 400V
V
EBO
——Emitter-Base
Voltage……………………………… 9V
I
C
——Collector
Current(DC)……………………………… 12A
I
B
——Base
Current……………………………………………6A
TO-220
1―
Base,B
2―Collector,C
3―Emitter, E
 
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
 
Characteristics
 
Collector-Emitter Breakdown Voltage
Emitter-Base Cut-off Current
 
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
BV
CEO
I
EBO
 
H
FE(1)
H
FE(2)
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
BE(sat)1
Cob
f
T
 
t
ON
 
t
STG
 
t
F
400 
 
8 
6 
 
 
 
 
 
 
 
 
 
 
 
 
180 
 
 
 
 
 
1 
40 
30 
1 
1.5 
3 
1.2 
1.6 
 
V 
I
C
=10mA, I
B
=0 
DC Current Gain
Collector- Emitter Saturation Voltage
�½�A 
V
EB
=9V, I
C
=0 
 
V
CE
=5V, I
C
=5A
 
V 
V 
V 
V 
V 
V
CE
=5V, I
C
=8A
I
C
=5A, I
B
=1A
I
C
=8A, I
B
=1.6A
I
C
=12A, I
B
=3A
I
C
=5A, I
B
=1A
I
C
=8A, I
B
=1.6A 
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product 
Turn On Time 
Storage Time 
Fall Time
 
 
 
4 
 
 
 
V
BE(sat)2
   
�½�F 
V
CB
=10V,f=0.1MHz
 
MH�½� 
V
CE
=10V
,I
C
=0.5A 
 
1.1  μs 
V
CC
=125V, I
C
=8A, 
3  μs 
0.7  μs 
I
B1
=1.6A,I
B2
=-1.6A