Shantou Huashan Electronic Devices Co.,Ltd.
N P N S I L I C O N T RANSISTOR
KSH13009
█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching
Suitable for Switching Regulator and Montor Control
█
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation
c
=25℃)
(T
……………………
100W
V
CBO
——Collector-Base
Voltage…………………………… 700V
V
CEO
——Collector-Emitter
Voltage………………………… 400V
V
EBO
——Emitter-Base
Voltage……………………………… 9V
I
C
——Collector
Current(DC)……………………………… 12A
I
B
——Base
Current……………………………………………6A
TO-220
1―
Base,B
2―Collector,C
3―Emitter, E
█
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
Characteristics
Collector-Emitter Breakdown Voltage
Emitter-Base Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CEO
I
EBO
H
FE(1)
H
FE(2)
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
BE(sat)1
Cob
f
T
t
ON
t
STG
t
F
400
8
6
180
1
40
30
1
1.5
3
1.2
1.6
V
I
C
=10mA, I
B
=0
DC Current Gain
Collector- Emitter Saturation Voltage
�½�A
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=5A
V
V
V
V
V
V
CE
=5V, I
C
=8A
I
C
=5A, I
B
=1A
I
C
=8A, I
B
=1.6A
I
C
=12A, I
B
=3A
I
C
=5A, I
B
=1A
I
C
=8A, I
B
=1.6A
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Turn On Time
Storage Time
Fall Time
4
V
BE(sat)2
�½�F
V
CB
=10V,f=0.1MHz
MH�½�
V
CE
=10V
,I
C
=0.5A
1.1 μs
V
CC
=125V, I
C
=8A,
3 μs
0.7 μs
I
B1
=1.6A,I
B2
=-1.6A