欢迎访问ic37.com |
会员登录 免费注册
发布采购

KSH13009F 参数 Datasheet PDF下载

KSH13009F图片预览
型号: KSH13009F
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 160 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
 浏览型号KSH13009F的Datasheet PDF文件第2页浏览型号KSH13009F的Datasheet PDF文件第3页  
Shantou Huashan Electronic Devices Co.,Ltd.
N P N S I L I C O N T RAN S I S T O R
KSH13009F
█ HIGH VOLTAGE SWITCH MODE APPLICICATION
High Speed Switching
Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 50W
V
CBO
——Collector-Base
Voltage…………………………… 700V
V
CEO
——Collector-Emitter
Voltage…��…………………… 400V
V
EBO
——Emitter-Base
Voltage……………………………… 9V
I
C
——Collector
Current(DC)……………………………… 12A
I
CP
——Collector
Current Pulse)
……………………………
24A
I
B
——Base
Current……………………………………………6A
TO-220F
1―
Base,B
2―Collector,C
3―Emitter, E
█ 电参数
(T
a
=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BV
CEO
I
EBO
H
FE
V
CE(sat)
Collector-Emitter Sustaining Voltage
Emitter-Base Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
400
1
8
6
40
30
1
1.5
3
V
mA
I
C
=10mA, I
B
=0
V
EB
=7V, I
C
=0
V
CE
=5V, I
C
=5A
V
CE
=5V, I
C
=8A
V
V
V
V
V
pF
MHz
I
C
=5A, I
B
=1A
I
C
=8A, I
B
=1.6A
I
C
=12A, I
B
=3A
I
C
=5A, I
B
=1A
I
C
=8A, I
B
=1.6A
V
CB
=10V, f=0.1MHz
V
CE
=10V, I
C
=0.5A
V
CC
=125V, I
C
=8A,
I
B1
=-I
B2
=1.6A
RL=15.6Ω
V
BE(sat)
Cob
f
T
t
ON
t
S
t
F
Base- Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Turn On Time
Storage Time
Fall Time
4
180
1.2
1.6
1.1
3.0
0.7
μs
μs
μs