HVGT
BR10F
is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
DO-590
Lot No.
BR10F
10kV 0.4A HIGH VOLTAGE DIODES
Outline Drawings :
mm
Cathode Mark
o 5.0
o 1.28
Features
High speed switching
High Current
High surge resisitivity for CRT discharge
27 min.
9.0
High reliability design
High Voltage
27 min.
Applications
X light Power supply
Laser
Voltage doubler circuit
Cathode Mark
Type
Mark
BR10F
Microwave emission power
BR10F
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
Junction Temperature
Allowable Operation Case Temperature
Storage Temperature
Symbols
V
RRM
I
O
I
FSM
T
j
Tc
T
stg
Condition
BR10F
10
Units
kV
A
peak
A
peak
°C
°C
°C
Ta=25°C,Resistive Load
0.4
10
125
125
-40 to +125
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Maximum Forward Voltage Drop
Maximum Reverse Current
Symbols
V
F
IR
1
IR
2
Maximum Reverse Recovery Time
Junction Capacitance
Trr
Cj
Conditions
at 25°C,I
F
=I
F(AV)
at 25°C,V
R
=V
RRM
at 100°C,V
R
=V
RRM
at 25°C
at 25°C,V
R
=0V,f=1MHz
BR10F
25
5.0
50
150
--
Units
V
uA
uA
nS
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com
E-mail:sales@getedz.com
2015
HVGT [ GETAI ELECTRONIC DEVICE CO.,LTD ]
