HVGT
ESJC50-08
ESJC50-08
8.0kV 500mA HIGH VOLTAGE DIODE
Outline Drawings :
mm
is high reliability resin molded type high voltage
Lot No.
Cathode Mark
o 7.5
o 1.28
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Features
High speed switching
Low VF
High surge resisitivity for CRT discharge
High reliability design
Ultra small pakage
20 min.
21
20 min.
DO-721
Applications
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
Cathode Mark
Type
Mark
ESJC50-08
HVGT
ESJC50-08
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
Junction Temperature
Allowable Operation Case Temperature
Storage Temperature
Symbols
V
RRM
I
O
I
FSM
T
j
Tc
T
stg
Condition
ESJC50-08
8.0
Units
kV
mA
A
peak
°C
°C
°C
Ta=25°C,Resistive Load
500
50
125
125
-40 to +125
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Maximum Forward Voltage Drop
Maximum Reverse Current
Symbols
V
F
IR
1
IR
2
Maximum Reverse Recovery Time
Junction Capacitance
Trr
Cj
Conditions
at 25°C,I
F
=I
F(AV)
at 25°C,V
R
=V
RRM
at 100°C,V
R
=V
RRM
at 25°C
at 25°C,V
R
=0V,f=1MHz
ESJC50-08
15
1.0
10
50
-
Units
V
µA
µA
nS
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com
E-mail:sales@getedz.com
2015
HVGT [ GETAI ELECTRONIC DEVICE CO.,LTD ]
