HVGT
ESJG50F08
is high reliability resin molded type high voltage
ESJG50F08
Outline Drawings :
mm
8.0kV 500mA 100nS HIGH VOLTAGE DIODES
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Lot No.
Cathode Mark
o 9.0
o 1.28
Features
High speed switching
High Current
22 min.
High temperature resistance
High reliability design
High Voltage
9.0
22 min.
DO-909
Applications
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
Cathode Mark
Mark
Maximum Ratings and Characteristics
Absolute Maximum Ratings
(Ta=25°C Unless otherwise specified )
Items
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
Junction Temperature
Allowable Operation Case Temperature
Storage Temperature
Symbols
V
RRM
I
O
I
FSM
T
j
Tc
T
stg
Ta=25°C,Resistive Load
Tp=8.3mS
ESJG50
F08
HVGT
Condition
ESJG50F08
8.0
500
Units
kV
mA
peak
A
peak
°C
°C
°C
25
175
-55 to +175
-55 to +175
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Maximum Forward Voltage Drop
Maximum Reverse Current
Symbols
V
F
IR
1
IR
2
Maximum Reverse Recovery Time
Junction Capacitance
Trr
Cj
Conditions
at 25°C,I
F
=I
F(AV)
at 25°C,V
R
=V
RRM
at 100°C,V
R
=V
RRM
at 25°C
at 25°C,V
R
=0V,f=1MHz
ESJG50F08
15
2.0
50
100
10
Units
V
uA
uA
nS
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com
E-mail:sales@getedz.com
2015
HVGT [ GETAI ELECTRONIC DEVICE CO.,LTD ]
