HV10G16
10mA 16kV 100nS-HIGH VOLTAGE DIODE
Typical characteristics:
I
FM
(mA)
28
24
20
16
12
8
4
0
20
40
60
0.1
I
RRM
(uA)
1
0.01
━T
a
=25℃
┅T
a
=100℃
━T
a
=25℃
┅T
a
=100℃
0.001
80
100
0
4
8
12
16
20
V
FM
(V)
Figure 1. Forward characteristics
V
RM
(kV)
Figure 2. Reverse characteristics
I
F(AV)
(mA)
V
R
(kV)
20
16
12
2
T
a
≤100℃
T
a
≤100℃
1.5
1
8
4
0
0
0.5
1
1.5
2
2.5
I
F(AV)
(mA)
Figure 3. V
R
‐I
F(AV)
Curve
0.5
0
10
100
1000
f
H
(kH
Z
)
Figure 4. I
F(AV)
‐f
H
Curve
GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
n
E-mail: sales@getedz.com
4001 83 84 85
China Tel:
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Tel: 0086-20-8184 9628
Fax: 0086-20-8184 9638
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www.getedz.com
www.hvgtsemi.com
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