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R2000F 参数 Datasheet PDF下载

R2000F图片预览
型号: R2000F
PDF下载: 下载PDF文件 查看货源
内容描述: [200mA 2.0kV 500nS-HIGH VOLTAGE DIODE ]
分类和应用: 高压
文件页数/大小: 2 页 / 288 K
品牌: HVGT [ GETAI ELECTRONIC DEVICE CO.,LTD ]
 浏览型号R2000F的Datasheet PDF文件第2页  
R2000F
200mA 2.0kV 500nS-HIGH VOLTAGE DIODE
High reliability resin molded type high voltage diode
in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings :
Features
F
2K T
R VG
H
*Fast switching
*Low leakage
*High reliability
*High current capability
*High surge capability
Applications
*
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: MIL-STD-202E, Method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.3 gram
DO-41 Series
Lead Diameter 0.9mm
1.0(25.4)
MIN
.205(5.2)
.166(4.2)
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
DIA
.107(2.7) DIA
.080(2.0)
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
Junction Temperature
Allowable Operation Case Temperature
Storage Temperature
Symbols
V
RRM
I
O
I
FSM
T
j
Tc
T
stg
Ta=25°C,
Ta=25°C,Resistive Load
Ta=25°C,8.3 ms
Condition
R2000F
2.0
200
30
125
125
-65 to +175
Units
kV
mA
A
peak
°C
°C
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Maximum Forward Voltage Drop
Maximum Reverse Current
Symbols
V
F
IR
1
IR
2
Maximum Reverse Recovery Time
Junction Capacitance
GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
Conditions
at 25°C,I
F
=I
F(AV)
at 25°C,V
R
=V
RRM
at 100°C,V
R
=V
RRM
at 25°C; I
F
=0.5A;
I
R
=1.0A;
I
rr
=0.25A;
R2000F
2.0
5.0
100
500
6.0
Units
V
uA
uA
nS
pF
Trr
Cj
at 25°C; V
R
=0V,f=1MHz
E-mail: sales@getedz.com
4001 83 84 85
China Tel:
n
n
Tel: 0086-20-8184 9628
Fax: 0086-20-8184 9638
n
www.getedz.com
www.hvgtsemi.com
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