The innovative Semiconductor Company!
HVV1012-250 HigH Voltage, HigH Ruggedness
TM
L-Band Avionics Pulsed Power Transistor
1025-1150 MHz, 10μs Pulse, 1% Duty Cycle
For Airborne DME, TCAS and IFF Applications
FeatuRes
• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input and Output Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme
tYPiCal PeRFoRManCe
High voltage vertical technology is well suited for high power pulsed applications in the
L-Band including Airborne DME, IFF, TCAS and Mode-S applications.
MODE
Class AB
FREQUENCY
(MHz)
VDD
(V)
IDQ
(mA)
Power
(W)
GAIN
(dB)
EFFICIENCY
(%)
IRL
(dB)
1150
50
100
250
19.5
48
20:1
Table 1:
Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of
pulse width = 10μs and pulse period = 1ms.
desCRiPtion
The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed
for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage HVVFET™ technology
produces over 250W of pulsed output power while offering high gain, high efficiency, and ease of matching
with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is
specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
oRdeRing inFoRMation
Device Part Number: HVV1012-250
Demo Kit Part Number: HVV1012-250-EK
Available through Richardson Electronics (http://rfwireless.rell.com/)
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS09A
12/11/08
1
HVVI [ HVVI SEMICONDUCTORS, INC. ]
