The innovative Semiconductor Company!
HVV1011-300 High Voltage, High Ruggedness
HVV1011-300 High Voltage, High Ruggedness
L-Band Avionics Pulsed Power Transistor
HVV1011-300
L-Band Avionics Pulsed Power Transistor
HigH Voltage, HigH Ruggedness
1030/1090 MHz, 50µs Pulse, 5% Duty
1030/1090 MHz, 50µs Pulse,Applications
Pulsed Power Transistor
5% Duty
For TCAS, IFF and Mode-S
L-Band Avionics
For TCAS, IFF and Mode-S Applications
50µs Pulse, 5% Duty
1030/1090 MHz,
TM
The innovative Semiconductor Company!
The innovative Semiconductor Company!
Symbol
Symbol
Symbol
V
BR(DSS)
V
BR(DSS)
I
DSS
V
BR(DSS)
I
DSS
DSS
I
GSS
I
GSS
G
P1
I
GSS
G
P1 1
IRL
G
P1
IRL
1
η
D1
IRL
1
η
D1
VGS(Q)
2
η
D1
VGS(Q)
2
VTH
VGS(Q)
2
VTH
VTH
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
eleCtRiCal CHaRaCteRistiCs
Parameter
Parameter
Breakdown
Parameter
Drain-Source
Drain-Source Breakdown
Drain Leakage Current
Drain-Source Breakdown
Drain Leakage Current
Gate Leakage
Current
Drain Leakage
Current
Gate Leakage Current
Power Gain
Gate Leakage
Loss
Power Return
Current
Input Gain
Power
Return Loss
Input
Gain
Drain Efficiency
Input Return Loss
Drain Quiescent Voltage
Gate Efficiency
Drain
Quiescent Voltage
Gate
Efficiency
Threshold Voltage
Gate Quiescent Voltage
Threshold Voltage
Threshold Voltage
For TCAS, IFF and Mode-S Applications
Conditions
Conditions
Conditions
VGS=0V,ID=5mA
VGS=0V,ID=5mA
VGS=0V,VDS=50V
VGS=0V,ID=5mA
VGS=0V,VDS=50V
VGS=5V,VDS=0V
VGS=0V,VDS=50V
VGS=5V,VDS=0V
F=1090MHz
VGS=5V,VDS=0V
F=1090MHz
F=1090MHz
F=1090MHz
F=1090MHz
F=1090MHz
VDD=50V,IDQ=100mA
F=1090MHz
VDD=50V,IDQ=100mA
VDD=5V, ID=300µA
VDD=50V,IDQ=100mA
VDD=5V, ID=300µA
VDD=5V, ID=300µA
Min
95
-
-
16
-
43
1.1
0.7
Min
Typical
Typical
Typical
Max
Min
95
102
95
102
102
-
-
50
-
50
1
200
50
-
1
16
18
1
16
18
-
-12
5
18
-
-12
48
50.5
-
48
-12
50.5
-8
1.1
1.45
1.1
45
1.45
-
0.7
1.2
1.45
0.7
1.2
1.8
1.2
1.7
Max
Unit
Unit
Unit
Max
-
V
-
V
200
V
µA
200
5
µA
µA
5
µA
-
dB
µA
dB
-
-8
-8
dB
dB
-
%
-
dB
%
1.8
V
1.8
%
V
1.7
1.7
V
V
V
PULSE CHARACTERISTICS
PULSE
CHaRaCteRistiCs
Pulse
CHARACTERISTICS
Symbol
Parameter
Symbol Parameter
1
Symbol
Parameter
t
r
Rise Time
Rise Time
T
r
1
t
r1
Rise Time
Fall Time
f
1
1
1
Fall Time
Fall Time
t
f
f
PD
Pulse Droop
T
1
PD
1
Pulse Droop
PD
Pulse Droop
Conditions
F=1090MHz
F=1090MHz
F=1090MHz
F=1090MHz
F=1090MHz
F=1090MHz
F=1090MHz
Conditions
Conditions
Typical
Min
Min
Typical Max
Min
-
-
-
-
-
-
-
Typical
<35
<35
<35
50
<15
<15
<15
50
0.3
0.3
0.3
0.5
Max
Units
Unit
Max
Units
50
nS
nS
nS
50
nS
nS
50
0.5
dB
0.5
dB
dB
THERMAL PERFORMANCE
THERMAL
PeRFoRManCe
tHeRMal
PERFORMANCE
Symbol
Symbol
θ
JC1
θ
JC1
Parameter
Parameter
Thermal Resistance
Thermal Resistance
Max
Max
0.20
0.20
Unit
Unit
°C/W
°C/W
RUGGEDNESS PERFORMANCE
RUGGEDNESS PERFORMANCE
Ruggedness PeRFoRManCe
Symbol
LMT
1
Symbol
LMT
1
Parameter
Load
Parameter
Mismatch
Load
Tolerance
Mismatch
Tolerance
Test Condition
F = Condition
Test 1090 MHz
F = 1090 MHz
Max
20:1
Max
20:1
Units
VSWR
Units
VSWR
The HVV1011-300 device is capable of withstanding an output load mismatch
The
HVV1011-300 device is at rated
an
withstanding nominal operating voltage
The
HVV1011-300 device
20:1 VSWR capable of
output load mismatch corresponding to a
mismatch
corresponding to a
is capable of withstanding
output power andan output load
20:1 VSWR
corresponding to a 20:1 VSWR at rated output
the frequency band of operation.
at rated
the frequency band
operating voltage
across
output power and nominal
of operation.
across
power and nominal operating voltage
across the frequency band of operation.
NOTE: : All parameters measured under pulsed conditions at 275W output power measured at the 10%
1.) NOTE: All parameters measured under
cycle =
conditions at 275W
= 100mA in a broad-
point of the pulse with pulse width = 50µsec, duty
pulsed
5% and VDD = 50V, IDQ
output power
1.) NOTE: All the 10% point of the pulse with pulseconditions at 275W output power
measured at parameters measured under pulsed width = 50µsec, duty cycle = 5%
band matched test fixture.
measured at the 10% point of the pulse with pulse width = 50µsec, duty cycle = 5%
2
and VDD = 50V, IDQ = 100mA in a broadband matched test fixture.
NOTE: Amount of gate voltage required
broadband matched test
current.
and VDD = 50V, IDQ = 100mA in a
to attain nominal quiescent
fixture.
1
2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.
2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.
HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc.
10235
51
st
St. Suite 100
HVVi Semiconductors, Inc.
10235 S.
S. 51st St. Suite 100
Phoenix, AZ. 85044
10235 S. 51
st
St. Suite 100
Phoenix, Az. 85044
Phoenix, Az. 85044
ISO 9001:2000 Certified
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or
Certified
ISO 9001:2000
visit www.hvvi.com
Tel: (866) 429-HVVi (4884) or visit
www.hvvi.com
© 2008
(866)
Semiconductors, Inc.
visitAll Rights Reserved.
Tel:
HVVi
429-HVVi (4884) or
All
www.hvvi.com
© 2008 HVVi Semiconductors, Inc.
Rights Reserved.
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS02A
EG-01-DS02A
12/11/08
EG-01-DS02A
12/12/08
2
2
12/12/08
2
HVVI [ HVVI SEMICONDUCTORS, INC. ]
