HVV1012-050
HVV1012-050
HVV1012-050
Pulsed Power Transistor
HVV1012-050
L-Band Avionics Pulsed Power Transistor
L-Band Avionics
HVV1012-050
MHz, Pulsed Power Transistor
L-Band Avionics Power Transistor
The innovative Semiconductor Company!
MHz, 10µs Pulse, 1% Duty
L-Band Avionics Pulsed10µs Pulse, 1% Duty
1025-1150
1025-1150
L-Band Avionics Pulsed Power
Duty Duty
1025-1150
HVV1012-050
MHz, 10µs 1%
Transistor
1025-1150 MHz, 10µs Pulse,Pulse, 1%
1025-1150 MHz, 10µs
Power Transistor
HVV1012-060 PRODUCT OVERVIEW
L-Band Avionics Pulsed
Pulse, 1% Duty
1025-1150 MHz, 10µs Pulse, 1% Duty
TM
The
i
nnovative Semiconductor Company!
The
i
nnovative Semiconductor Company!
The
i
nnovative Semiconductor Company!
The
i
nnovative Semiconductor Company!
The
i
nnovative Semiconductor Company!
to
the frequency range from 1025MHz to 1150MHz.
1150 MHz.
FEATURES
FEATURES
FEATURES
Power Gain
•
•
High Power Gain
High
FEATURES
GainRuggedness
•
•
Excellent
Excellent
High
FEaTURES
Ruggedness
•
High Power Power Gain
•
•
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
Value
Symbol Parameter
Symbol Parameter
Value
ABSOLUTE MAXIMUM RATINGS
105
Symbol Drain-Source Voltage 105
Parameter
V
DSS
Drain-Source Voltage Value
aBSOLUTE MaXIMUM RaTINGS
Symbol V
DSS
Parameter
Value
Unit
Pr
eli
m
THERMAL CHARACTERISTICS
THERMAL CHARACTERISTICS
THERMAL CHARACTERISTICS
THERMAL CHARACTERISTICS
THERMaL CHaRaCTERISTICS
THERMAL CHARACTERISTICS
Max
Symbol Parameter
Symbol Parameter
Max
THERMAL CHARACTERISTICS
0.28
11
Symbol Thermal Resistance
Parameter
Max
Thermal Resistance
0.28
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ELECTRICaL CHaRaCTERISTICS
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Symbol
Parameter
Parameter
Unit
Unit
Unit
°C/W
°C/W
JC
Symbol
JC
Parameter
Max
Symbol Parameter
Max
Unit
Unit
1
1
Thermal
1
JC
Thermal Resistance
JC
Symbol
Thermal Resistance
0.28
Parameter
Resistance
0.28
0.28
Unit
°C/W
Max
°C/W
°C/W
JC
1
Thermal Resistance
0.28
°C/W
JC
Unit
Unit
Unit
V
V
Symbol Parameter
Value
Unit
V
V
GS
Gate-Source Voltage
Gate-Source Voltage
10
V
Drain-Source 105
105
DSS
V
DSS
V
GS
Drain-Source Voltage Voltage 10 V
V
DSS
DSX
Drain-Source Voltage 105
10
V
A
V Gate-Source Current Voltage 44 V
Unit
V
Gate-Source
I
DSX
I
GS
Drain Voltage
Drain Current 10
Value
A
V
GS
Symbol Parameter
V
GS
P
DSX
Gate-Source Voltage
95
4
V
DSS
D
Drain CurrentDissipation
Drain-Source Voltage
10
625
V
W
105
625
Drain
A
PI
Power Current 4
Power Dissipation
W
D
I
DSX
A
I
V
GS
SD
Drain Current
Voltage
4
625 to
Gate-Source
Temperature -65 to
V
°C
10
-65
A
TP
StorageDissipation
Storage
°C
Power Temperature
W
P
D
DSX
T
S
Power Dissipation
625
W
P
D
T
S
Power
Current
625
+200
A
W
°C
I
DSX
Drain
Dissipation
4
+200to
T
S
StorageStorage Temperature -65
Temperature -65 to
°C
P
2
J
Power Dissipation
625
to
T
S
D
TT
J
Storage Temperature -65
200
W
°C
+200
°C
°C
Junction
Junction
200
+200
T
S
T
Storage Temperature
+200
-65 to
Temperature
Temperature
Junction
200
°C
°C
J
Junction
T
J
200
°C
+200
T
J
Junction
200
°C
Temperature
Temperature
T
J
Junction
200
°C
Temperature
Temperature
Conditions
Conditions
Typ
Typ
Units
Units
Symbol
Parameter
Conditions
2mA
Typ
V
BR(DSS)
Drain-Source Breakdown Conditions
Drain-Source Breakdown
VGS=0V,ID=1mA
VGS=0V,ID=1mA
110
110
V
Symbol V
BR(DSS)
Parameter
Typ
102
Units VUnits
Symbol
Parameter
Conditions
Typ
Units
V
BR(DSS)
Drain-Source Current
VGS=0V,ID=1mA
110
V
II
DSS
Drain Leakage BreakdownVGS=0V,ID=1mA
Drain Leakage Current
VGS=0V,VDS=48V
VGS=0V,VDS=48V
<10
µA
Symbol
Parameter
Conditions
Typ
<10
V
V
BR(DSS) DSS
110
<50
V
Units
µA
V
BR(DSS)
Drain-Source Breakdown
Drain-Source Breakdown
VGS=0V,ID=1mA
110
Drain Leakage
VGS=0V,VDS=48V
µA
I
GSS
I
GSS
Gate Leakage Current
Gate Leakage Current
VGS=5V,VDS=0V
VGS=5V,VDS=0V
<1
Drain-Source
Current
VGS=0V,ID=1mA
110
<10
V
DSS
I
DSS
I
V
BR(DSS)
Drain Leakage Current Current VGS=0V,VDS=48V
<10 <1 µA
µA
µA
Drain Leakage
Breakdown
VGS=0V,VDS=48V
<10
DSS
1 1
G
GSS
Gate
Drain
Leakage Current
G
Power Leakage Current VGS=5V,VDS=0V
Power Current
PP
OUT
=60W,F=1025,1150MHz<1
<1
23 µA
µA
dB
dB
I
Gate Gain
VGS=5V,VDS=0V
<1
µA
VGS=0V,VDS=48V
<10
23
µA
OUT
=60W,F=1025,1150MHz
I
GSS
I
I
DSS
P P
LeakageGain
Gate
Leakage Current
VGS=5V,VDS=0V
GSS
11
I
GSS
P
Gate
Gain
VGS=5V,VDS=0V
<1
G
Power
23
dB
IRL
Input Return Loss
Input Gain
PP
OUT
=60W,F=1025,1150MHz23
23
99 dB
µA
dB
dB
dB
OUT
=60W,F=1025,1150MHz
G
P1
G
P1
1
IRL Power Gain Return Loss
P
OUT
=60W,F=1025,1150MHz
Power
Leakage Current
P
OUT
=60W,F=1025,1150MHz
11 1
G
P
IRL Input Return Efficiency
Power Gain
P
OUT
PP
OUT
=60W,F=1025,1150MHz9
23
52
dB
=60W,F=1025,1150MHz
Input Return
9
Drain Loss
Drain Efficiency
52
dB
dB
%dB
%
OUT
=60W,F=1025,1150MHz
IRL
1
IRL
1
DD
P
OUT
=60W,F=1025,1150MHz
Input Return Loss
Loss
P
OUT
=60W,F=1025,1150MHz
9
1
11
1
1
IRL
Input Return
P
OUT
PP
OUT
=60W,F=1025,1150MHz
52
=60W,F=1025,1150MHz
9
1
PD
PD
Pulse Droop
Pulse Droop
<0.3
dB
Drain Efficiency
52
%
dB
%
OUT
=60W,F=1025,1150MHz
D
Drain Efficiency
Loss
P
OUT
=60W,F=1025,1150MHz
Drain Efficiency
P
OUT
=60W,F=1025,1150MHz
52
<0.3
%
dB
D
D
1
1
Drain Efficiency
P
OUT
=60W,F=1025,1150MHz
52
D
PD
Pulse
P
OUT
=60W,F=1025,1150MHz<0.3 <0.3
%
PD
1
PD
1
1
Pulse Droop Droop
P
OUT
=60W,F=1025,1150MHz
dB
dB
dB
Pulse Droop
P
OUT
=60W,F=1025,1150MHz
<0.3
PD
UnderPulse
Pulse Droop
Pulse Width = 10µsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 25mA
P
OUT
=60W,F=1025,1150MHz
at VDD = 48V, IDQ = 25mA
<0.3
dB
1.) Under PulseConditions: Pulse Width = 10µsec, Pulse Duty Cycle = 1%
Conditions:
1
1.)
Under Pulse Conditions: Pulse Width = 10μsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 25mA
1.) Under Pulse Conditions: Pulse Width = 10µsec,10µsec, Pulse Duty Cycle =VDD at 48V, IDQ = 25mA 25mA
1.)
2
1.) Under Pulse Conditions: Pulse Width = Pulse Duty Cycle = 1% at
at VDD
VDD = 48V,
= 25mA
Under Pulse Conditions: Pulse Width = 10µsec, Pulse Duty Cycle = 1%
1% =
= 48V, IDQ
IDQ =
1.)
Rated at T
CASE
Conditions: Pulse Width = 10µsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 25mA
Under Pulse
= 25°
in
48V Supply Voltage
•
•
•
48V Supply Voltage
High
Ruggedness
Excellent Ruggedness
Excellent
Power Gain
•
48V
•
Supply Voltage Voltage
High Power
Supply
•
•
Excellent
Gain
48V
Ruggedness
High Power Gain
•
•
•
48V Supply Voltage
Excellent Ruggedness
Excellent Ruggedness
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
•
•
48V Supply Voltage
48V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc.
HVVi Semiconductors,
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Reserved.
ar
The device resides in aatwo-lead metal flanged
The device resides in two-lead metal flanged
package with liquid crystal polymer lid. The
package with a two-lead metal flanged flanged
The device in liquid a two-lead metal
The device resides resides incrystal polymer lid. The
device
package style is
metal flanged
NI-400 package
two-lead
polymer lid.
package
in
liquid polymer lid.
The
The
NI-400
resides
crystal crystalqualifiedThe gross
device resides
with
two-lead metal flanged
for The
package
package with liquid
a
in a
style is qualified for gross
package
test
liquid
a two-lead metal
lid.
for gross
leak
resides
MIL-STD-750D, for
flanged
style is
NI-400
polymer lid.
qualified Method 1071.6,
The
leak
with
packageisstyle
polymer
package
1071.6,
device
test –– MIL-STD-750D, Method
The
in
crystal
is qualified
NI-400 package
with liquid crystal
style
The HV400
gross
NI-400 package
MIL-STD-750D,
lid.
gross
Test
with liquid
C.
Test Condition C.
leak test –
package
–Condition
style is qualified
Method 1071.6,
crystal polymer
1071.6,
leak test
gross leak test MIL-STD-883, Method 1014.
MIL-STD-750D, Method
for
The
qualified for
package style
–
is qualified for
1071.6,
leak
Test Condition C.
test – MIL-STD-750D, Method
gross
NI-400
Test Condition C.
Test
test – MIL-STD-750D, Method 1071.6,
leak
Condition C.
RUGGEDNESS
RUGGEDNESS
Test Condition C.
The HVV1012-060 device is capable
capablecapable of
The HVV1012-060
The HVV1012-060 device device
of
is
withstanding
is
of
The
corresponding toan
device
VSWR load ratedoutput
HVV1012-060
corresponding toaa20:1 VSWR
capable
output
at rated
VSWR
at
a 20:1
withstanding output20:1
is
mismatch
of
output
mismatch
an output load mismatch corresponding to
withstanding an
load
The
power and operating voltage
mismatch
the
HVV1012-060
output
withstanding
and operating VSWR at acrossoutput
an
power to a 20:1
device
atvoltageoutput
of
the
across
corresponding to VSWR
load
capable
a 20:1
is
rated
voltage across
corresponding
at rated output power
20:1 VSWR at rated
rated
and
withstanding
and
a
operating
load
of
mismatch
corresponding
an output
operating
output
the
frequency
to
frequency
band
band
of
operation.
voltage operation.
power power operating voltage
at
across across
and
thefrequency band
to a
operation.
Condition
output
of
20:1
voltage
rated
the
Max Units
corresponding
Parameter
VSWR
Condition
power and operating
Test
across
operation.
Units
the
frequency
band
Test
of
Symbol
Symbol Parameter
Max
RUGGEDNESS
RUGGEDNESS
RUGGEDNESS
RUGGEDNESS
The HVV1012-060 device is capable of
The HVV1012-060 device is capable of
RUGGEDNESS
withstanding an output load mismatch
withstanding an output load mismatch
frequency
and operating voltage across the
band
of
operation.
power
1 1
frequency
band
of
operation.
LMT
LMT
Load
P
OUT
Condition
20:1
20:1
VSWR
OUT
=
Symbol Load Test Condition
60W
Max
Parameter PTest=
60W
Max
Units
Symbol Parameter
band
Units VSWR
frequency
Parameter Test Condition
operation.
Units
of
Symbol
1
Max
Mismatch
Mismatch
1
LMT
LoadP
P
OUT
=
60W
20:1
20:1
LMT
Load
=
60W
1150MHz
VSWR VSWR
=
Symbol Parameter
OUT
OUT
Condition
Test
FF= 1150MHz
Max
LMT
1
Load
Tolerance
P
20:1
Units
VSWR
Tolerance
=
60W
Mismatch
Mismatch
1
F = 1150MHz
LMT
Load
Tolerance
=
60W
P
1150MHz
20:1
VSWR
Mismatch
F =
OUT
F = 1150MHz
Tolerance
Mismatch
Tolerance
F = 1150MHz
Tolerance
y
EG-01-PO03X2
EG-01-PO03X2
EG-01-PO03X5
EG-01-PO03X2
06/10/08
EG-01-PO03X2
EG-01-PO03X2
06/10/08
EG-01-PO03X2
10/13/08
06/10/08
11
06/10/0806/10/08
06/10/08
1
1
1
1
1
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
HVV1012-060 device is aa high
The high power HVV1012-060 device is
The high power
high
voltage silicon enhancement mode a transistor
voltage silicon
The high HVV1012-060 device is RF is
The high power power HVV1012-060 devicehigh a high
DESCRIPTION
enhancement mode RF transistor
DESCRIPTION
designed silicon
HVV1012-060
mode applications
for enhancement
transistor
The
voltage
power
L-Band mode
device is
applications
high
voltage designedenhancement pulsed RFradar RF
a high
silicon for L-Band pulsed radar
transistor
operating over the frequency range fromapplications
operating over the frequency range from1025 MHz
1025 MHz
designed for
voltage silicon enhancement mode
radar
RF
designed
high
L-Band L-Band pulsed
device
transistor
for
pulsed radar applications
The
1150 MHz.
HVV1012-060 device is a
is a
voltage
The
1150the frequency range from 1025
high
high
power
to over
for
over the frequency range
applications
MHz
to
high
power HVV1012-060
radar
from 1025
MHz.
operating
L-Band pulsed
designed
silicon enhancement mode RF transistor
operating
MHz
voltage
to 1150 MHz.
frequency range from 1025 MHz
for
operating over the
silicon
to 1150 MHz.
enhancement mode RF
radar applications
designed for L-Band pulsed
transistor designed
to 1150 MHz.
the frequency range from 1025 MHz
over
L-Band
over
operating
pulsed avionics applications operating
FEATURES
FEATURES
L-Band Avionics Pulsed Power Transistor
PACKAGE
Duty
1025-1150MHz, 10μs
PACKAGE
Pulse, 1%
PACKAGE
PACKAGE
for DME and TCAS Apllications
PACKAGE
PACKAGE
PaCKaGE
HVVI [ HVVI SEMICONDUCTORS, INC. ]
