HVV1214-025
HVV1214-025
L-Band Radar
L-Band Radar Pulsed Power Transistor
HVV1214-075
Pulsed Power Transistor
1200-1400
HVV1214-025
MHz, 200!s Pulse, 10% Duty
The innovative Semiconductor Company!
Pulsed Power Transistor
1200-1400 MHz, 200!s Pulse, 10% Duty
L-Band Radar
HVV1214-025
L-Band Radar
MHz, 200µs Pulse, 10% Duty
1200-1400
Pulsed Power Transistor
L-Band Radar Pulsed Power Transistor
1200-1400 MHz, 200!s Pulse, 10% Duty
HVV1214-025 PRODUCT OVERVIEW
1200-1400 MHz, 200!s Pulse, 10% Duty
L-Band Radar Pulsed Power Transistor
PACKAGE
PACKAGE
1200-1400 MHz, 200µs Pulse, 10% Duty
DESCRIPTION
Radar Applications
DESCRIPTION
HVV1214-025 device is
for Ground Based
PACKAGE
The high power
a high
DESCRIPTION
DESCRIPTION
TM
The
i
nnovative Semiconductor Company!
The
i
nnovative Semiconductor Company!
The
i
nnovative Semiconductor Company!
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i
nnovative Semiconductor Company!
The
i
nnovative Semiconductor Company!
•
Excellent Ruggedness
•
Excellent Ruggedness
•
48V Supply
Voltage
Supply
The
•
high
48VSupply Voltage
power HVV1214-075 device is a high
•
High Power Gain
Voltage
48V
•
voltage silicon enhancement mode RF transistor
Power Gain
•
High High Power Gain
Excellent Ruggedness
•
radar applications
•
designed for
Ruggedness
Excellent
L-Band pulsed
RATINGS
ABSOLUTE
Voltage
•
48V Supply Voltage
frequency range from
48V
Excellent
the
Supply
MAXIMUM
•
operating over
Ruggedness
•
Symbol Parameter
Value
Unit
Symbol Parameter
Value
Unit
•
48V Supply
1.2GHz to 1.4GHz.
Voltage
V
DSS
Drain-Source Voltage 105
V
V
DSS
105
Symbol
Drain-Source Voltage
RaTINGS
V
Parameter
aBSOLUTE MaXIMUM
Value Unit
V
GS
Gate-Source Voltage
10
V
V
GS
Gate-Source Voltage
105
V
V
DSS
Drain-Source Voltage
10 Unit
V
A
Symbol Parameter Current
Value2
I
DSX
Drain
FEATURES
Current
I
DSX
Drain
2
A
V
GS
Drain-Source Voltage 105
10
Gate-Source
ValueV
V
W
Unit
V
DSS
Symbol Parameter
Voltage
P
D2
Power Dissipation
116
2
P
D
Power
Current
Voltage
8
Dissipation
116
W
I
DSS
Drain
Drain-Source
V
V
GS
V
DSX
Gate-Source
Gain
10
95
V
T
StorageVoltage
Temperature 105 to
A
°C
-65
T
SS
2
High Power
Temperature
250
to
Storage
-65
°C
P
D
Power Dissipation
Gate-Source Voltage
10 A
W
V
I
DSX
V
GS
Drain Current
+200
Excellent Ruggedness
2
+200
T
S
Storage Temperature -65 to
Drain Current
A
DSX
P
D2
IT
1,2
Power Dissipation
116 2
Junction
200 W
°C
°C
48V
Junction
Voltage
Supply
T
J J2
200
°C
+200
P
D
Power Dissipation -65 to
116 °C W
Temperature
T
S
Storage Temperature
Temperature
T
J
Junction
°C
T
S
Storage Temperature
200
to
-65
°C
+200
Temperature
ABSOLUTE MAXIMUM RATINGS
°C
T
J
Junction
200 +200
T
J
Junction
200
°C
Temperature
Temperature
Symbol Parameter
Value
Unit
V
DSS
Drain-Source Voltage 105
THERMAL CHARACTERISTICS
V
THERMAL CHARACTERISTICS
THERMaL CHaRaCTERISTICS
V
THERMAL CHARACTERISTICS
V
GS
Gate-Source Voltage
10
I
Symbol Parameter
8
Max
A
Unit
DSX
F =
1090
MHz
1300MHz
Symbol
Drain Current
Max
Unit
Symbol
Parameter
Max
Unit
Mismatch
P
OUT
= 75W
LMT
1
Load
20:1
VSWR
2
Tolerance
F =
1090
MHz
P
D 1
Power Dissipation
W
°C/W
Thermal Resistance
250
1.5
THERMAL CHARACTERISTICS
1.5
Tolerance
Mismatch
Thermal Resistance
°C/W
Thermal Resistance
0.70
°C/W
JC
THERMAL CHARACTERISTICS
°C
F
T
S
Storage Temperature -65 to
RUGGEDNESS
= 1400MHz
Tolerance
Symbol Parameter
Max
+200
Unit
ELECTRICALCHARACTERISTICS
°C
Symbol
Junction
CHARACTERISTICS
Unit
Parameter
Max
ELECTRICaL CHaRaCTERISTICS
ELECTRICAL
T
J
Thermal Resistance
1.5
200
°C/W
The HVV1214-075 device is capable of
ELECTRICAL CHARACTERISTICS
°C/W
Thermal Resistance
1.5
Temperature
withstanding an output load mismatch
Symbol
Parameter
Conditions
corresponding to a 20:1
Typ
Units
VSWR over all phase
Symbol
Parameter
Conditions
Typ
Units
ELECTRICAL
Parameter
CHARACTERISTICS
2mA
102
V
BR(DSS)
Drain-Source Breakdown
VGS=0V,ID=1mA
110
V
Symbol
Typ
Units
angles
ELECTRICAL CHARACTERISTICS
Conditions
V
BR(DSS)
Drain-Source Breakdown
VGS=0V,ID=1mA
and rated output power and operating
110
V
<25
I
BR(DSS)
Drain Leakage Current
VGS=0V,VDS=48V
<10
V
DSS
Drain-Source Breakdown
VGS=0V,ID=1mA
V
!A
voltage across the 110
frequency
!A
band of
I
DSS
Drain Leakage Current
VGS=0V,VDS=48V
<10
Symbol
Parameter
Leakage
Current
Typ
<10
Units
!A
I
GSS
Gate Leakage
VGS=5V,VDS=0V
<1
I
DSS
VGS=0V,VDS=48V
µA
operation.
CHARACTERISTICS
Conditions
I
THERMAL
Drain
Leakage
Current
Gate
Current
VGS=5V,VDS=0V
<1
!A
GSS
1
Symbol Drain-Source Breakdown
Parameter
Conditions
Typ V
µA
Units
V
BR(DSS)P
VGS=0V,ID=1mA
1300MHz
110
<1
G
1
Power Gain
P
OUT
=25W,F=1200,1400MHz
Test Condition
17.5
dB
I
GSS
Gate Leakage Current
VGS=5V,VDS=0V
Symbol Parameter
Units
G
P
1
1
Power Gain Breakdown
P
OUT
=25W,F=1200,1400MHz
17.5
dB
V
BR(DSS)
Drain Input
Gain
Current
Drain-Source Loss
VGS=0V,ID=1mA
110
!A
dB
Max
V
I
DSS
G
P
1
Leakage
VGS=0V,VDS=48V
1
1300MHz
IRL
P
8
dB
Power
Return
P
OUT
OUT
=25W,F=1200,1400MHz <10
21
Symbol Parameter
ReturnLoss
Max
Unit =75W,F=1200MHz,1400MHz
P
OUT
=
8
LMT
Load
75W
20:1
VSWR
IRL
Input Leakage Current
P
OUT
=25W,F=1200,1400MHz
dB
VGS=0V,VDS=48V
Mismatch
<10
!A
I
GSS
I
DSS
1
Gate Drain
Resistance
Leakage Current
0.70
VGS=5V,VDS=0V
1300MHz
Drain Efficiency
P
OUT
=25W,F=1200,1400MHz
%
IRL
Input
Efficiency
P
OUT
=75W,F=1200MHz,1400MHz
<1
9
49
Thermal Return Loss
°C/W
=25W,F=1200,1400MHz
F = 1400MHz
!A
dB
JC
Drain
P
OUT
49
%
1
Gate
Efficiency
VGS=5V,VDS=0V
Tolerance
<1
!A
GSS
G
P1
IPD
1
Power GainDroop Current
P
OUT
=25W,F=1200,1400MHz
Drain
Leakage
P
OUT
=75W,F=1200MHz,1400MHz
17.5
44
Pulse
P
OUT
=25W,F=1200,1400MHz
<0.2 dB
%
dB
1300MHz
D
1
1
Pulse Droop
P
OUT
=25W,F=1200,1400MHz
<0.2
dB
PD
1
Power Gain
P
=75W,F=1200MHz,1400MHz
8
17.5
dB
IRL
1
G
P 1
Input Return Loss
P
OUT
=25W,F=1200,1400MHz
PD
Pulse Droop
P
OUT
OUT
=25W,F=1200,1400MHz
<0.6
dB
dB
IRL
Input Return Pulse
P
OUT
=25W,F=1200,1400MHz
8
1
1.) UnderDrain Efficiency
=25W,F=1200,1400MHz= 10%
48V, IDQ 15mA
% dB
Pulse Conditions:Loss Width =
Pulse Duty
10%
Under Pulse Conditions: Pulse
Pulse Width = P
OUT
Pulse Duty Cycle =
Cycle
at VDD =
atVDD =
=
48V,IDQ = 15mA
ELECTRICAL CHARACTERISTICS
200!sec,Pulse Duty Cycle= 10% 49VDD =48V, IDQ = 15mA
1.) Under Pulse Conditions:
Width = 200µsec,
P =25W,F=1200,1400MHz at
200!sec,
OUT
200µsec, Pulse Duty Cycle =
VDD =
2.) Rated
Pulse Conditions:
at T Drain Efficiency
=
dB %
2
1.) Under
Pulse Droop
PD
1
Rated at TCASE
CASE
= 25°C
Pulse Width =
P
OUT
=25W,F=1200,1400MHz
10% at
<0.249
48V, IDQ = 50mA
= 25°C
25°C
2.) Rated at T
CASE
1
Pulse Droop
P
OUT
=25W,F=1200,1400MHz
<0.2
dB
PD
2.) Rated at T
CASE
= 25°C
Symbol
Parameter
Conditions
Typ
Units
1.) Under Pulse Conditions: Pulse Width = 200!sec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA
V
BR(DSS)
Drain-Source
Pulse Width
VGS=0V,ID=1mA
110
1.) Under Pulse Conditions:
Breakdown
= 200!sec, Pulse Duty Cycle = 10% at VDD = 48V,
V
IDQ = 15mA
2.) Rated at T
CASE
= 25°C
I
DSS
Drain
Inc.
VGS=0V,VDS=48V
<10
µA
2.) Rated at T
CASE
=
Leakage
HVVi Semiconductors,
25°C
Current
Foradditional information, visit:
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EG-01-PO05X1
HVVi Semiconductors, Inc.
For additional information, visit:
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EG-01-PO05X1
st
I
GSS
<1
µA
st
10235 S. 51 St.
Gate
100
Suite
Leakage Current
HVVi Semiconductors, Inc. Confidential
HVVi
VGS=5V,VDS=0V
Confidential
4/29/08
For
Semiconductors, Inc.
additional information:
10235
Semiconductors,
Gain
Suite 100
4/29/08
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HVVi
S. 51 St.
Power
Inc.
G
P
dB
EG-01-PO08X1
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HVVi Semiconductors, Inc.
For
HVVi
P
OUT
=75W,F=1200MHz,1400MHz
Phoenix, Az. 85044
©2008
additional information, visit:
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21
2008HVVi Semiconductors, Inc.
www.hvvi.com
Semiconductors, Inc. All Rights Reserved.
Phoenix,
51st
85044
100
1
10/13/08
1
10235 S.
Az.
St.
Input Return Loss
©
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
Suite
st
IRL
P
OUT
=75W,F=1200MHz,1400MHz
9
dB
HVVi
10235 S. 51 St. Suite 100
Semiconductors, Inc.
For additional information, visit:
Inc. Confidential
EG-01-PO05X1
HVVi Semiconductors,
www.hvvi.com
5/23/08
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Semiconductors, Inc.
1
Phoenix, AZ. 85044
HVVi
st
St. Suite
Drain Efficiency
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
44
For
HVVi Semiconductors, Inc. All Rights Reserved.
additional information,Confidential
visit:
www.hvvi.com
EG-01-PO05X1
P
OUT
=75W,F=1200MHz,1400MHz
%
Phoenix, Az. 85044
© 2008
Semiconductors, Inc.
10235 S.
D
51
100
HVVi
4/29/08
1
st
10235 S. 51 St. Suite
Droop
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
HVVi
P
OUT
=75W,F=1200MHz,1400MHz
Semiconductors, Inc. Confidential
4/29/08
PD
1
<0.6
dB
Phoenix, Az. 85044
Pulse
100
1
FEATURES
Power Gain
DESCRIPTION
Gain
•
High
Power
High
•
High Power
FEATURES
Ruggedness
FEaTURES
Gain
Excellent
Pr
eli
m
Phoenix, Az. 85044
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
in
ar
The high power HVV1214-025 device is a high
DESCRIPTION
voltage silicon enhancement mode RF
is a high
transistor
The high power HVV1214-075 device
transistor
voltage silicon enhancement mode RF
designed for L-Band pulsed radar applications
voltage silicon enhancement mode RF transistor
DESCRIPTION
designed for L-Band pulsed radar applications
operating
for
the frequency
radar
from
designed
over
L-Band pulsed
rangea
applications
The high power overthe frequency rangefrom
operating HVV1214-025 device is high
The highto 1.4GHz.
1.2GHz
operating
1.4GHz.
the
mode device
high
over
voltage siliconpower HVV1214-025 RF transistor
from
The high
to enhancement
frequency
is a
is a high
1.2GHz
power HVV1214-025 device
range
voltage
voltage silicon enhancement mode RF transistor
1.2GHz
L-Band pulsed radar applications
designed for
to 1.4GHz.
silicon enhancement mode RF transistor designed for
designed for L-Band pulsed radar applications
operating over the frequency range from
FEATURES
L-Band pulsed
the
applications operating
operating over
FEATURES
1.2GHz to 1.4GHz.
radar
frequency range from
over the
FEATURES
from 1.2GHz to 1.4GHz.
1.2GHz to 1.4GHz.
frequency range
L-Band Radar Pulsed Power Transistor
1200-1400 MHz, 200µs Pulse, 10% Duty
The device resides in a Surface Mount
The device resides in a Surface Mount
Transistor Package with a ceramic lid. The
Transistor Package with a ceramic lid. The
PACKAGE
style is qualified for gross leak
SM200 package
SM200 package style is qualified for gross leak
test – MIL-STD-883, Method 1014.
The device MIL-STD-883, Method 1014.
test – resides in a Surface Mount
The device resides a a Surface Mount
Transistor Package with in ceramic lid. The
Transistor style is with a ceramic lid. The
SM200 packagePackage qualified for gross leak
SM200 package
test – MIL-STD-883, style is
Mount Transistor Package
The device resides in a
Method qualified for gross leak
Surface
RUGGEDNESS
1014.
The device resides in a two-lead metal flanged
test – MIL-STD-883, Method 1014.
RUGGEDNESS
with a ceramic
with
The SM200 package style is qualified
package
lid.
liquid crystal polymer lid. The
for gross leak
package style is qualified for
1014.
leak
HV400
test – MIL-STD-883, Method
gross
RUGGEDNESS
test – MIL-STD-750D, Method 1071.6, Test
The HVV1214-025 device is capable of
The HVV1214-025 device is capable of
RUGGEDNESS
Condition C.
withstanding an output load mismatch
withstanding an output load mismatch
corresponding to a 20:1 VSWR over all phase
corresponding to 20:1
all phase
RUGGEDNESS
aoutput VSWR over operating
angles and rated
power of
and
The HVV1214-025 device is capable and operating
RUGGEDNESS
angles and rated output power
The HVV1214-025 device is capableof
voltage across the frequency band
withstandingacross the frequency band ofof
mismatch
voltage an
device is capable of withstanding an
The HVV1214-025
output load load mismatch
withstandinga 20:1 VSWR over all phase
an output
operation.
corresponding to
operation.
The
device is capable
output load
HVV1214-075
20:1 VSWR
to a 20:1 VSWR over
corresponding to a power and operating
of
angles and
mismatch corresponding
over all phase
rated output
withstanding
rated output power and
mismatch
Units
an
load
angles and
and
frequency band of
Symbol
Max
all phase
across
Parameter
output
Condition
and
Max
operating
voltage
angles
Parameter
output power
operating
Units
the
rated
Test Condition
Symbol
1
corresponding to ain a
Test =
300W
of
flanged
VSWR
20:1
OUT
VSWR over all phase
The device
Load
the frequency band
resides
two-lead metal
20:1
voltage across
LMT
P
operation.
voltage across the
rated output power
operation.
frequency band of
and
LMT
1
Load
20:1
VSWR
angles and
Mismatch P
OUT
=
300W
package with liquid crystal polymer operating
lid. The
operation.
Mismatch
F =
1090
MHz
voltage across the
F =
1090
frequency band of
Tolerance
HV400 package
Test Condition MHz
gross leak
Symbol Parameter
style is qualified for
Max
Units
Tolerance
operation.
Parameter Test Condition
1
Symbol
LMT
test – MIL-STD-750D,
300W
Load
P
OUT
=
Method 1071.6,
Max
20:1
Test
Units
VSWR
Condition C.
LMT
Parameter
Load
Symbol
1
Mismatch
Test
P
OUT
=
300W
Condition
Max
20:1
Units
VSWR
y
PACKAGE
PACKAGE
HVV1214-075
PaCKaGE
1
HVVI [ HVVI SEMICONDUCTORS, INC. ]
