HVV1214-025
L-Band Radar Pulsed Power Transistor
1200-1400 MHz, 200µs Pulse, 10% Duty
DESCRIPTION
The high power HVV1214-25 device is a high
voltage silicon enhancement mode RF transistor
designed for L-Band pulsed radar applications
operating over the frequency range from
1.2 GHz to 1.4 GHz.
PACKAGE
FEATURES
•
•
•
High Power Gain
Excellent Ruggedness
48V Supply Voltage
The device resides in a Surface Mount
Transistor Package with a ceramic lid. The
SMT package style is qualified for gross leak
test – MIL-STD-750D, Method 1071.6, Test
Condition C.
Unit
V
V
A
W
°C
°C
The
i
nnovative Semiconductor Company!
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DSS
V
GS
I
DSX
P
D2
T
S
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Storage Temperature
Junction
Temperature
Value
105
10
2
116
-65 to
+200
200
RUGGEDNESS
The HVV1214-25 device is capable of
withstanding an output load mismatch
corresponding to a 20:1 VSWR over all phase
angles and rated output power and operating
voltage across the frequency band of
operation.
Symbol
LMT
1
Parameter
Load
Mismatch
Tolerance
Test Condition
P
OUT
= 25W
F = 1400 MHz
Max
20:1
Units
VSWR
THERMAL CHARACTERISTICS
Symbol
θ
JC1
Parameter
Thermal Resistance
Max
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Symbol
V
BR(DSS)
I
DSS
I
GSS
G
P1
IRL
1
η
D1
PD
1
Parameter
Drain-Source Breakdown
Drain Leakage Current
Gate Leakage Current
Power Gain
Input Return Loss
Drain Efficiency
Pulse Droop
Conditions
VGS=0V,ID=1mA
VGS=0V,VDS=48V
VGS=5V,VDS=0V
P
OUT
=25W,F=1200,1400MHz
P
OUT
=25W,F=1200,1400MHz
P
OUT
=25W,F=1200,1400MHz
P
OUT
=25W,F=1200,1400MHz
Typ
110
<10
<1
17.5
8
49
<0.2
Units
V
A
A
dB
dB
%
dB
1.) Under Pulse Conditions: Pulse Width = 200 sec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA
2.) Rated at T
CASE
= 25°C
HVVi Semiconductors, Inc.
10235 S. 51
st
St. Suite 100
Phoenix, Az. 85044
For additional information, visit:
www.hvvi.com
HVVi Semiconductors, Inc. Confidential
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
April 23 2008
1
HVVI [ HVVI SEMICONDUCTORS, INC. ]
