HWC30NC
C-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
Features
•
•
•
•
Low Cost GaAs Power FET
Class A or Class AB Operation
11 dB Typical Gain at 4 GHz
5V to 10V Operation
Outline Dimensions
860
S ou rce
650
1
4
Description
430
2
5
The HWC30NC is a medium power GaAs FET
designed for various L-band & S-band
applications.
210
3
6
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
S ou rce
0
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
3mA
175
°
C
-65 to +175
°
C
6W
Units:
µm
Thickness: 100
±5
Chip size
±50
Bond Pads 1-3 (Gate):
Bond Pads 4-6 (Drain):
0.0
58.5
344.5
400.0
60 x 60
60 x 60
* mounted on an infinite heat sink
Electrical Specifications
(T
A
=25
°
C) f =4 GHz for all RF Tests
Symbol
I
DSS
Parameters & Conditions
Saturated Current at V
DS
=3V, V
GS
=0V
Units
mA
Min.
500
Typ.
600
Max.
900
V
P
Pinch-off Voltage at V
DS
=3V, I
D
=30mA
V
-3.5
-2.0
-1.5
g
m
P
1dB
Transconductance at V
DS
=3V, I
D
=300mA
Power Output at Test Points
V
DS
=10V, I
D
=0.5 I
DSS
Gain at 1dB Compression Point
V
DS
=10V, I
D
=0.5 I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=10V, I
D
=0.5 I
DSS
mS
-
300
-
dBm
29
30
-
G
1dB
dB
9
10
-
PAE
%
30
35
-
Small Signal Common Source Scattering Parameters
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HW [ HEXAWAVE, INC ]
