. k ni s t a e h eti nif ni n a n o d et n u o M ] 2[
.stloV 01 deecxe ton dluohs )
SD
V( egatlov gnitarepo
ecruos-niard tnecseiuq eht taht sdnemmocer evawaxeH
W 21
C 5 7 1 + ot 5 6-
n oit a pi s si D r e w o P
er ut ar e p m e T e g ar ot S
er ut ar e p m e T l e n n a h C
t n err u C et a G
t n err u C ni ar D
e g atl o V e cr u o S ot et a G
e g atl o V e cr u o S ot ni ar D
T
P
]2[
GTS
T
C 571
Am 6
SSD
I
V 5-
V51+
s g nit a R m u mi x a M et ul o s b A
s g nit a R m u mi x a M et ul o s b A
s g nit a R m u mi x a M et ul o s b A
.egakcap cimarec elbatnuom-ecafrus ,tsoc wol a ni dereffo
yltneserp si tI
. s n oit a cil p p a e v a w or ci M d n a F R s u oir a v r of
d e n gi s e d T E F S E M s A a G r e w o p h gi h a si A R 1 8 6 1 F W H e h T
n oi t p i r c s e D
n oi t p i r c s e D
n oit pir c s e D
n oi t p i r c s e D
•
tso C wo L
tso C wo L
tso C wo L
tso C wo L
n oit ar e p O B A s s al C r o A s s al C
n oit ar e p O B A s s al C r o A s s al C
n oit ar e p O B A s s al C r o A s s al C
n oit ar e p O B A s s al C r o A s s al C
).pyt( mBd 84=
3
PI
s n oi s n e mi D e nilt u O
s n oi s n e mi D e nilt u O
s n oi s n e mi D e nilt u O
s n oi s n e mi D e nilt u O
s er ut a e F
s er ut a e F
s er ut a e F
s er ut a e F
•
).pyt( mBd 5.43=
Bd1
P
:r e w o P t u pt u O h gi H
w t u pt u O h gi H
•
).pyt( bD 51=
L
G
: ni a G h gi H
: ni a G h gi H
: ni a G h gi H
: ni a G h gi H
•
). p yt ( % 3 4 = E A P
: y c n ei ciff E h gi H
: y c n ei ciff E h gi H
: y c n ei ciff E h gi H
: y c n ei ciff E h gi H
•
: ytir a e ni L h gi H
Hexawave Inc.
[3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP
3
•
Symbol
Electrical Specifications at 25
°
SD
V
]1[
IP
3
PAE
G
L
P
1dB
R
th
g
m
V
P
I
DSS
Saturated Drain Current
Power-added Efficiency (P
out
= P
1dB
)
Linear Power Gain
Pinch-off Voltage
Output Power @1 dB Gain
Transconductance
Third-order Intercept Point
Thermal Resistance
2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
All specifications are subject to change without notice.
Parameters
[3]
°
°
V
DS
=3V, I
DS
=60 mA
V
DS
=3V, V
GS
=0V
V
DS
=3V, I
DS
=600 mA
Channel to Case
V
DS
=10V
I
DS
=0.5I
DSS
Conditions
f=2.4 GHz
RA Package (Ceramic)
Units
°
C/W
dBm
dBm
mS
mA
dB
%
V
L-Band GaAs Power FET
Min.
33.5
-3.5
900
14
-
-
-
-
HWF1681RA
June 2005
1200
Typ.
34.5
-2.0
600
15
48
43
9
Max.
1600
-1.5
V3
12
-
-
-
-
-
] 1[
HC
T
G
I
D
I
SG
V
HW [ HEXAWAVE, INC ]
