HWL26NC
!
!
March 2004
V2
Features
•
Low Cost GaAs Power FET
•
Class A or Class AB Operation
•
17 dB Typical Gain at 2.4 GHz
•
5V to 10V Operation
376
Outline Dimensions
451.5
1
Description
The HWL26NC is a medium power GaAs FET
designed for various L-band & S-band applications.
226
2
4
226.0
76
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
3
Drain to Source
Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
1 mA
175
°
C
-65 to +175
°
C
1.7 W
0
0.0
75.5
275
440
524
Units:
µm
Thickness: 50
±5
Chip size
±50
Bond Pad 1, 3 (Source): 100 x 100
Bond Pad 2
(Gate): 100 x 100
Bond Pad 4
(Drain): 100 x 100
* mounted on an infinite heat sink
Electrical Specifications
(T
A
=25
°
C) f = 2.4 GHz for all RF Tests
Symbol
I
DSS
V
P
Parameters & Conditions
Saturated Current at V
DS
=3V, V
GS
=0V
Pinch-off Voltage at V
DS
=3V, I
D
=10 mA
Transconductance at V
DS
=3V, I
D
=100 mA
Power Output at Test Points
V
DS
=10V, I
D
=0.5 I
DSS
Gain at 1dB Compression Point
V
DS
=10V, I
D
=0.5 I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=10V, I
D
=0.5 I
DSS
Units
mA
V
mS
dBm
dB
%
Min.
150
-3.5
-
25
15
30
Typ.
200
-2.0
120
26
16
40
Max.
280
-1.5
-
-
-
-
g
m
P
1dB
G
1dB
PAE
Hexawave Inc.
2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
All specifications are subject to change without notice.
HW [ HEXAWAVE, INC ]
