HWL26NPB
L-Band GaAs Power FET
Autumn 2002 V1
Features
•
•
Plastic Packaged GaAs Power FET
Suitable for Commercial Wireless
Applications
High Efficiency
3V to 6V Operation
Outline Dimensions
•
•
1
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
Description
The HWL26NPB is a medium Power GaAs FET
using surface mount type plastic package for
various L-Band applications. It is suitable for
various 900 MHz, 1900 MHz cellular/wireless
applications.
2
3
PB Package (SOT-23)
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+7V
-5V
I
DSS
1mA
150
°
C
-65 to +150
°
C
0.7 W
Electrical Specifications
(T
A
=25
°
C) f=1900 MHz for all RF Tests
Symbol
I
DSS
V
P
Parameters & Conditions
Saturated Current at V
DS
=5V, V
GS
=0V
Pinch-off Voltage at V
DS
=5V, I
D
=11mA
Transconductance at V
DS
=5V, I
D
=110mA
Thermal Resistance
Power Output at Test Points
V
DS
=3V, I
D
=0.5I
DSS
V
DS
=5V, I
D
=0.5I
DSS
Gain at 1dB Compression Point
V
DS
=3V, I
D
=0.5I
DSS
V
DS
=5V, I
D
=0.5I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=3V, I
D
=0.5I
DSS
V
DS
=5V, I
D
=0.5I
DSS
Units
mA
V
mS
°
C/W
dBm
Min.
150
-3.5
-
-
21.0
23.0
9.0
10.0
Typ.
220
-2.0
120
100
21.5
24.5
10.0
11.0
40.0
45.0
Max.
-
-1.5
-
-
-
-
-
-
-
-
g
m
R
th
P
1dB
G
1dB
dB
PAE
%
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HW [ HEXAWAVE, INC ]
