HWL32NPA
L-Band GaAs Power FET
Autumn 2002 V1
Typical Performance at 25 C
°
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=3V, IDS=0.5IDSS
Po (dBm)
40
PAE (%)
60
50
40
30
20
10
30
Po
Gain
Eff
20
Gain
10
0
0
0
5
10
15
20 Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=3V, IDS=0.5IDSS
Po (dBm)
PAE (%)
40
30
20
60
50
40
30
20
10
0
Po
Gain
Eff
Gain
10
0
Pin (dBm)
0
5
10
15
20
25
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HW [ HEXAWAVE, INC ]
