HWL34NC
L-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
•
•
14.5 dB Typical Gain at 2.4 GHz
5V to 10V Operation
1525.0
Outline Dimensions
1392.5
Description
The HWL34NC is a power GaAs FET designed for
various L-band & S-band applications.
9
1235.0
1
10
5
1077.5
920.0
Absolute Maximum Ratings
762.5
2
11
6
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
6mA
175
°
C
-65 to +175
°
C
12W
0.0
605.0
3
447.5
7
12
290.0
4
132.5
8
13
0.0
444.5
75.5
524.0
* mounted on an infinite heat sink
Electrical
Symbol
I
DSS
Units:
µm
Thickness: 100
±5
Chip size
±50
Bond
Tests
100 x 100
Specifications
(TA=25
°
C) f = 2.4 GHz for all RF
Pads 1-4 (Gate):
Bond Pads 5-8 (Drain):
100 x 100
Parameters & Conditions
Units
Pads
Min.
Bond
9-13(Source): 100 x 100
Typ.
Max.
Saturated Current at V
DS
=3V, V
GS
=0V
mA
900
1200
1600
V
P
Pinch-off Voltage at V
DS
=3V, I
D
=60mA
V
-3.5
-2.0
-1.5
g
m
P
1dB
Transconductance at V
DS
=3V, I
D
=600mA
Power Output at Test Points
V
DS
=10V, I
D
=0.5 I
DSS
Gain at 1dB Compression Point
V
DS
=10V, I
D
=0.5 I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=10V, I
D
=0.5 I
DSS
mS
-
700
-
dBm
33
34
-
G
1dB
dB
12.5
13.5
-
PAE
%
25
30
-
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
V
DS
=10V, I
DS
=0.5I
DSS
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HW [ HEXAWAVE, INC ]
