1N4001 thru 1N4007
PLASTIC SILICON RECTIFIERS
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Amperes
DO- 41
FEATURES
●
Low cost
●
Diffused junction
●
Low forward voltage drop
●
Low reverse leakage current
●
High current capability
●
The plastic material carries UL recognition 94V-0
1.0(25.4)
MIN.
.034(0.9)
DIA
.028(0.7)
.205(5.2)
MAX
.107(2.7)
DIA
.080(2.0)
1.0(25.4)
MIN.
MECHANICAL DATA
●
Case: JEDEC DO-41 molded plastic
●
Polarity: Color band denotes cathode
●
Weight: 0.012 ounces , 0.34 grams
●
Mounting position :Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load (JEDEC Method)
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
@T
J
=25℃
@T
J
=100℃
@T
A
=75
℃
SYMBOL 1N4001
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
1N4002
100
70
100
1N4003
200
140
200
1N4004
400
280
400
1.0
1N4005
600
420
600
1N4006
800
560
800
1N4007
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
C
J
R
θJC
T
J
T
STG
30
1.1
5.0
50
15
26
-55 to +125
-55 to +125
A
V
uA
pF
℃/W
℃
℃
NOTE:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2.Thermal resistance junction of ambient
~3~
HY [ HY ELECTRONIC CORP. ]
