RATING AND CHARACTERISTIC CURVES
BZV55C SERIES
FIG. 2 - TOTAL POWER DISSIPATIONVS.
AMBIENT TEMPERATURE
600
FIG. 1 - THERMAL RESISTANCE VS.LEAD LENGTH
THERM.RESIST.JUNCTION / AMBIENT(K/M)
500
400
300
TOTAL POWER DISSIPATION(mw)
0
5
10
15
20
LEAD LENGTH (mm)
500
400
300
200
200
100
0
100
0
0
40
80
120
160
200
AMBIENT TEMPERATURE (°C)
FIG.3 -TYPICAL CHANGE OF WORKING VOLTAGE
UNDER OPERATING CONDITIONS AT Tamb=25°C
1000
VOLTAGE CHAGNE(mA)
T
J
=25°C
RELATIVE VOLTAGE CHANGE
FIG. 4 - TYPICAL CHANGE OF WORKING VOLTAGE VS.
JUNCTION TEMPERATURE
1.3
V
Z
tn=Vzt/Vz(25°C)
1.2
TKyz=10x10
-4/
K
1.1
6x10
-4/
K
8x10
-4/
K
4x10
-4/
K
2x10
-4/
K
0
-2x10
-4/
K
-4x10
-4/
K
100
Iz=5mA
1.0
10
0.9
0.8
1
0
5
15
10
Z-VOLTAGE (V)
20
25
-60
0
60
120
180
240
JUNCTION TEMPERATURE (°C)
FIG.5 - TYPICAL CHANGE OF WORKING VOLTAGE VS.
JUNCTION TEMPERATURE
TEMPERATURE COEFFICIENT OF Vz (10
-4
/K)
15
DIODE CAPACITANCE (PF)
200
FIG.6 - DIODE CAPACITANCE VS.Z-VOLTAGE
10
150
V
R
=2V
T
J
=25°C
5
100
Iz=5mA
0
50
0
0
-5
0
10
20
30
40
50
0
5
10
15
20
25
Z-VOLTAGE(V)
Z-VOLTAGE(V)
~ 404 ~
HY [ HY ELECTRONIC CORP. ]
