欢迎访问ic37.com |
会员登录 免费注册
发布采购

HS3DB 参数 Datasheet PDF下载

HS3DB图片预览
型号: HS3DB
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装高效率(超快速)玻璃钝化整流二极管 [SURFACE MOUNT HIGH EFFICIENCY (ULTRA FAST) GLASS PASSIVATED RECTIFIERS]
分类和应用: 整流二极管光电二极管功效
文件页数/大小: 2 页 / 90 K
品牌: HY [ HY ELECTRONIC CORP. ]
 浏览型号HS3DB的Datasheet PDF文件第2页  
HS3XB /UF3XB SERIES
SURFACE MOUNT
HIGH EFFICIENCY (ULTRA FAST)
GLASS PASSIVATED RECTIFIERS
FEATURES
Low cost
Diffused junction
Ultra fast switching for high efficiency
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT -
3.0
Amperes
SMB
.083(2.11)
.075(1.91)
.155(3.94)
.130(3.30)
.185(4.70)
.160(4.06)
.012(.305)
.006(.152)
MECHANICAL DATA
Case: Molded Plastic
Polarity:Color band denotes cathode
Weight: 0.003 ounces,0.093 grams
Mounting position: Any
.096(2.44)
.084(2.13)
.060(1.52)
.030(0.76)
.008(.203)
.002(.051)
.220(5.59)
.200(5.08)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
HS3AB HS3BB HS3DB HS3GB HS3JB HS3KB HS3MB
UF3AB UF3BB UF3DB UF3GB UF3JB UF3KB UF3MB
50
35
50
100
70
100
200
140
200
400
280
400
3.0
600
420
600
800
560
800
1000
700
1000
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25℃
@T
J
=100℃
@T
A
=55
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
UNIT
V
V
V
A
I
FSM
V
F
I
R
T
RR
C
J
R
θJA
T
J
T
STG
50
50
1.0
150
1.3
5.0
100
75
30
20
-55 to +150
-55 to +150
1.7
A
V
μA
nS
pF
℃/W
Maximum Reverse Recovery Time(Note 1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1.Measured with I
F
=0.5A,I
R
=1A
,I
RR
=0.25A
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
3.Thermal resistance junction to ambient
~ 112 ~