KBU8005 thru KBU810
SILICON BRIDGE RECTIFIERS
REVERSE VOLTAGE
- 50
to
1000Volts
FORWARD CURRENT
- 8.0
Amperes
KBU
.157(4.0)*45°
.935(23.7)
.895(22.7)
.15 X23L
(3.8 X5.7L)
HOLE THRU
FEATURES
●
Surge overload rating -200 amperes peak
●
Ideal for printed circuit board
●
Reliable low cost construction utilizing
molded plastic technique
●
Plastic material has UL
●
Mounting postition:Any
●
Mounting torgue:5 In.Ib.Max
.700(17.8)
.600(16.8)
300
(7.5)
.780(19.8)
.740(18.8)
1.00
MIN.
(25.4)
.052(1.3)DIA.
.048(1.2)TYP.
.087(2.2)
.071(1.8)
.220(5.6)
.180(4.6)
.276(7.0)
.256(6.5)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Output Current at
T
C
=100℃
Peak Forward Surge Current 8.3ms single
Half Sine-Wave Super Imposed on Rated Load
(JEDEC Method)
Maximum Instantanous Forward Voltage Drop
per Element at 4.0A
Maximum Reverse Leakage at rated T
J
=25℃
DC Blocking Voltage Per Element
T
J
=100℃
Typical Junction Capacitance Per Element (Note1)
Operating Temperature Range
Storage Temperature Range
SYMBOL KBU8005 KBU801 KBU802 KBU804 KBU806 KBU808 KBU810
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
8.0
600
420
600
800
560
800
1000
700
1000
UNIT
V
V
V
A
I
FSM
200
A
V
F
I
R
C
J
T
J
T
STG
1.0
10
300
250
-55 to +125
-55 to +150
V
μA
pF
℃
℃
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
~ 356 ~
HY [ HY ELECTRONIC CORP. ]
