SM5817 thru SM5819
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
●
Metal-Semiconductor junction with gard ring
●
Epitaxial construction
●
Low forward voltage drop
●
High current capability
●
The plastic material carries UL recognition 94V-0
●
For use in low vlotage, high frequency inverters,
REVERSE VOLTAGE
- 20
to
40
Volts
FORWARD CURRENT
- 1.0
Amperes
SMA
.062(1.60)
.055(1.40)
.114(2.90)
.098(2.50)
free wheeling, and polarity protection applications
.181(4.60)
.157(4.00)
.012(.305)
.006(.152)
.103(2.62)
.079(2.00)
MECHANICAL DATA
●
Case： Molded Plastic
●
Polarity: lndicated by cathode band
●
Weight: 0.002 ounces,0.064 grams
.060(1.52)
.030(0.76)
.208(5.28)
.188(4.80)
.008(.203)
.002(.051)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Maximum Forward Voltage at 1.0A DC
Maximum Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
@T
J
=25℃
@TJ=100℃
@T
A
=75
℃
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
SM5817
20
14
20
SM5818
30
21
30
1.0
SM5819
40
28
40
UNIT
V
V
V
A
I
FSM
V
F
V
F
I
R
C
J
R
θJA
T
J
T
STG
0.450
0.750
40
0.550
0.875
1.0
10
110
80
-55 to +150
-55 to +150
0.600
0.900
A
V
V
mA
pF
℃/W
℃
℃
NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance junction to ambient,
~ 153 ~
HY [ HY ELECTRONIC CORP. ]
