GL3276A
Absolute Maximum Ratings(Ta=25
¡ )
É
SYMBOL
V
CC
I
OUT
P
D
T
OPR
T
STG
PARAMETER
Supply voltage
Output Current
Allowable power
dissipation
Operating temperature
Storage temperature
VALUE
6.0
2.5
270
- 20 to +75
-40 to +125
UNIT
V
mA
mW
¡ É
¡ É
Recommended Operating Condition
SYMBOL
V
CC
f
IN
PARAMETER
Supply voltage
Input frequency
MIN
4.5
30
TYP
5.0
38
MAX
5.5
80
UNIT
V
KHz
Electrical characteristics (VCC = 5.0V, Ta = 2.5¡
)
É
SYMBOL
I
CC
V
IN
A
V
F
BW
r
IN
t
PW1
Output pulse width
t
PW2
V
OL
V
OH
Note 1
: r
IN
=
Low Level
output voltage
Low Level
output voltage
47
( V
IN
V
X
) 1
PARAMETER
Supply current
Input voltage
Voltage gain
BPF bandwidth
Input impedance
TEST CONDITION
MIN
TYP
1.2
MAX
2.8
3.1
1.7
80
3.0
160
770
770
UNIT
mA
V
dB
KHz
K§
Ù
µ
S
REMARK
I
IN
= 0A
I
IN
=-330
µA
f
IN
=38kHz
V
IN
=30
µ
V
P-P
-3dB Bandwidth
V
IN
=30
µ
V
P-P
f
IN
=38kHz CW
V
IN
=0.2
µ
V
P-P
f
IN
=38kHz
burstwave
V
IN
=500
µ
V
P-P
f
IN
=38kHz
burstwave
V
IN
=50mV
P-P
2.0
0.6
70
2.0
80
440
440
2.5
0.8
76
2.5
110
note
*
1
note
µ
S
*
1
0.2
4.8
5.0
0.4
V
V
K§
Ù
where V
IN
=input level, V
X
=test value)
(
2 :
input burst
wave form
output pulse
600
µS
600
µS
38KHz Carrier
2
HYNIX [ HYNIX SEMICONDUCTOR ]
