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GM71C17800CJ-7 参数 Datasheet PDF下载

GM71C17800CJ-7图片预览
型号: GM71C17800CJ-7
PDF下载: 下载PDF文件 查看货源
内容描述: X8快速页模式DRAM\n [x8 Fast Page Mode DRAM ]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 9 页 / 94 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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GM71C17800C
GM71CS17800CL
2,097,152 WORDS x 8 BIT
CMOS DYNAMIC RAM
Description
The GM71C(S)17800C/CL is the new
generation dynamic RAM organized 2,097,152
x 8 bit. GM71C(S)17800C/CL has realized
higher density, higher performance and various
functions by utilizing advanced CMOS process
technology. The GM71C(S)17800C/CL offers
Fast Page Mode as a high speed access mode.
Multiplexed address inputs permit the
GM71C(S)17800C/CL to be packaged in
standard 400 mil 28pin plastic SOJ, and standard
400mil 28 pin plastic TSOP II. The package size
provides high system bit densities and is
compatible with widely available automated
testing and insertion equipment.
Features
* 2,097,152 Words x 8 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
t
RAC
t
CAC
GM71C(S)17800C/CL-5
GM71C(S)17800C/CL-6
GM71C(S)17800C/CL-7
50
60
70
13
15
18
t
RC
90
110
130
t
PC
35
40
45
* Low Power
Active : 715/660/605mW (MAX)
Standby : 11mW (CMOS level : MAX)
0.83mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 2048 Refresh Cycles/32ms
* 2048 Refresh Cycles/128ms (L- version)
* Battery Back Up Operation (L- version)
* Self Refresh Operation (L-version)
Pin Configuration
28 SOJ
V
SS 1
I/O0
2
I/O1
3
I/O2
4
I/O3
5
WE
6
RAS
7
NC
8
A10
9
A0
10
A1
11
A2
12
A3
13
V
CC 14
28
V
SS
27
I/O7
26
I/O6
25
I/O5
24
I/O4
23
CAS
22
OE
21
A9
20
A8
19
A7
18
A6
17
A5
16
A4
15
V
SS
28 TSOP II
V
SS 1
I/O0
2
I/O1
3
I/O2
4
I/O3
5
WE
6
RAS
7
NC
8
28
V
SS
27
I/O7
26
I/O6
25
I/O5
24
I/O4
23
CAS
22
OE
21
A9
20
A8
19
A7
18
A6
17
A5
16
A4
15
V
SS
A10
9
A0
10
A1
11
A2
12
A3
13
V
CC 14
(Top View)
Rev 0.1 / Apr’01