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GM71CS17403C-6 参数 Datasheet PDF下载

GM71CS17403C-6图片预览
型号: GM71CS17403C-6
PDF下载: 下载PDF文件 查看货源
内容描述: 4,194,304字× 4位CMOS动态RAM [4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 10 页 / 100 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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GM71C(S)17403C/CL  
Notes:  
1. AC Measurements assume tT = 2ns.  
2. An initial pause of 200us is required after power up followed by a minimum of eight  
initialization cycles (any combination of cycles containing RAS-only refresh or CAS-before-  
RAS refresh). If the internal refresh counter is used, a minimum of eight CAS-before-RAS  
refresh cycles are required.  
3. Operation with the tRCD(max) limit insures that tRAC(max) can be met, tRCD(max) is specified as a  
reference point only; if tRCD is greater than the specified tRCD(max) limit, then access time is  
controlled exclusively by tCAC.  
4. Operation with the tRAD(max) limit insures that tRAC(max) can be met, tRAD(max) is specified as a  
reference point only; if tRAD is greater than the specified tRAD(max) limit, then access time is  
controlled exclusively by tAA.  
5. Either tODD or tCDD must be satisfied.  
6. Either tDZO or tDZC must be satisfied.  
VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Also,  
transition times are measured between VIH(min) and VIL(max).  
7.  
8. Assume that tRCD<=tRCD(max) and tRAD<=tRAD(max). If tRCD or tRAD is greater than the maximum  
recommended value shown in this table, tRAC exceeds the value shown.  
9. Measured with a load circuit equivalent to 1 TTL loads and 100pF.  
Assume that tRCD>=tRCD(max) and tRAD<=tRAD(max).  
10.  
11. Assume that tRCD<=tRCD(max) and tRAD>=tRAD(max).  
12.  
13.  
Either tRCH or tRRH must be satisfied for a read cycles.  
OFF(max) and tOEZ(max) define the time at which the outputs achieve the open circuit condition  
t
and are not referenced to output voltage levels.  
14.  
tWCS, tRWD, tCWD, tAWD and tCPW are not restrictive operating parameters. They are included in the  
data sheet as electrical characteristics only; if tWCS>=tWCS(min), the cycles is an early write cycle  
and the data out pin will remain open circuit (high impedance) throughout the entire cycle; if  
t
RWD>=tRWD(min), the tCWD>=tCWD(min), and tAWD>=tAWD(min), or tCWD>=tCWD(min), tAWD>=  
tAWD(min) and tCPW>=tCPW(min), the cycle is a read-modify-write and the data output will contain  
data read from the selected cell; if neither of the above sets of conditions is satisfied, the  
condition of the data out (at access time) is indeterminate.  
15. These parameters are referenced to CAS leading edge in early write cycles and to WE leading  
edge in delayed write or read-modify-write cycles.  
t
RASP defines RAS pulse width in fast page mode cycles.  
16.  
17.  
Access time is determined by the longer of tAA or tCAC or tACP  
Rev 0.1 / Apr’01