GM71C(S)17403C/CL
Capacitance (VCC = 5V+/-10%, TA = 25C)
Symbol
CI1
Parameter
Input Capacitance (Address)
Input Capacitance (Clocks)
Output Capacitance (Data-In/Out)
Min
Max
Unit
pF
Note
1
-
-
-
5
7
7
CI2
pF
1
CI/O
pF
1, 2
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = VIH to disable DOUT
.
AC Characteristics (VCC = 5V+/-10%, TA = 0 ~ 70C, Notes 1, 2, 18, 19)
Test Conditions
Input rise and fall times: 2 ns
Input timing reference levels: 0.8V, 2.4V
Output timing reference levels: 0.8V, 2.0V
Output load : 1 TTL gate + C (100pF)
(Including scope and jig)
L
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
GM71C(S)17403 GM71C(S)17403 GM71C(S)17403
C/CL-5
C/CL-6
C/CL-7
Unit Note
Symbol
Parameter
Min Max Min Max Min Max
Random Read or Write Cycle Time
RAS Precharge Time
84
30
-
-
104
40
-
-
124
50
-
-
ns
ns
t
RC
tRP
CAS Precharge Time
7
-
10
60
-
13
70
-
ns
t
CP
ns
ns
ns
ns
21
22
t
RAS
CAS
ASR
RAH
ASC
CAH
RCD
RAD
RSH
CSH
CRP
ODD
DZO
DZC
RAS Pulse Width
50 10,000
7 10,000
10,000
10,000
t
CAS Pulse Width
10 10,000
13 10,000
t
Row Address Set up Time
Row Address Hold Time
Column Address Set-up Time
0
7
0
7
-
-
-
-
0
10
0
-
-
-
-
0
10
0
-
-
-
-
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
Column Address Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
RAS Hold Time
10
13
11 37
14 45
12 30
14 52
12 35
3
4
t
t
9
10
35
5
25
-
t
13
40
5
-
-
13
45
5
-
-
24
CAS Hold Time
-
t
CAS to RAS Precharge Time
OE to DIN Delay Time
-
-
-
t
t
13
0
-
15
0
-
18
0
-
5
6
6
7
t
OE Delay Time from DIN
CAS Delay Time from DIN
Transition Time (Rise and Fall)
-
-
-
0
-
0
-
0
-
t
tT
2
50
2
50
2
50
Rev 0.1 / Apr’01
HYNIX [ HYNIX SEMICONDUCTOR ]
