GM71V17403C
GM71VS17403CL
4,194,304 WORDS x 4 BIT
CMOS DYNAMIC RAM
Description
The GM71V(S)17403C/CL is the new
generation dynamic RAM organized 4,194,304
words x 4 bit. GM71V(S)17403C/CL has
realized higher density, higher performance and
various functions by utilizing advanced CMOS
process technology. The GM71V(S)17403C/CL
offers Extended Data Out (EDO) Page Mode as
a high speed access mode. Multiplexed address
inputs permit the GM71V(S)17403C/CL to be
packaged in a standard 300 mil 24(26) pin SOJ,
and a standard 300 mil 24(26) pin plastic TSOP
II. The package size provides high system bit
densities and is compatible with widely
available automated testing and insertion
equipment. System oriented features include
single power supply 3.3V +/- 0.3V tolerance,
direct interfacing capability with high
performance logic families such as Schottky
TTL.
Features
* 4,194,304 Words x 4 Bit Organization
* Extended Data Out Mode Capability
* Single Power Supply (3.3V +/- 0.3V)
* Fast Access Time & Cycle Time
(Unit: ns)
t
RAC
t
CAC
GM71V(S)17403C/CL-5
GM71V(S)17403C/CL-6
GM71V(S)17403C/CL-7
50
60
70
13
15
18
t
RC
84
104
124
t
HPC
20
25
30
Pin Configuration
24(26) SOJ
V
CC
I/O1
I/O2
WE
RAS
NC
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
26
25
24
23
22
21
* Low Power
Active : 432/369/360mW (MAX)
Standby : 7.2mW (CMOS level : MAX)
: 0.36mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
*All inputs and outputs TTL Compatible
* 2048 Refresh Cycles/32ms
* 2048 Refresh Cycles/128ms (L-version)
* Self Refresh Operation (L-version)
* Battery Backup Operation (L-version)
* Test Function : 16bit parallel test mode
24(26) TSOP II
V
SS
I/O4
I/O3
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
V
CC
I/O1
I/O2
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
26
25
24
23
22
21
V
SS
I/O4
I/O3
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
8
9
10
11
12
13
19
18
17
16
15
14
8
9
10
11
12
13
19
18
17
16
15
14
(Top View)
Rev 0.1 / Apr’01
HYNIX [ HYNIX SEMICONDUCTOR ]
