GM71V18163C
GM71VS18163CL
EDO Page Mode Cycle
Symbol
Parameter
EDO Page Mode Cycle Time
EDO Page Mode RAS Pulse Width
Access Time from CAS Precharge
RAS Hold Time from CAS Precharge
Output data Hold Time from CAS low
CAS Hold Time referred OE
CAS to OE Setup Time
Read command Hold Time
from CAS Precharge
GM71V(S)18163 GM71V(S)18163 GM71V(S)18163
C/CL-5
C/CL-6
C/CL-7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
Note
25
16
9,17,22
Min Max Min Max Min Max
t
HPC
t
RASP
t
ACP
t
RHCP
t
DOH
t
COL
t
COP
t
RCHP
20
-
-
30
3
8
5
30
-
100,000
25
-
-
35
3
10
5
35
-
100,000
30
-
-
40
3
13
5
40
-
100,000
30
-
-
-
-
-
35
-
-
-
-
-
40
-
9
EDO Page Mode Read-Modify-Write Cycle
Symbol
Parameter
GM71V(S)18163 GM71V(S)18163 GM71V(S)18163
C/CL-5
C/CL-6
C/CL-7
Unit
ns
ns
Note
Min Max Min Max Min Max
t
HPRWC
EDO Page Mode Read-Modify-Write
Cycle Time
57
45
-
-
68
54
-
-
79
62
-
-
t
CPW
WE Delay Time from CAS Precharge
14,22
Refresh
Symbol
Parameter
GM71V(S)18163 GM71V(S)18163 GM71V(S)18163
C/CL-5
C/CL-6
C/CL-7
Unit
Note
1024
cycles
1024
cycles
Min Max Min Max Min Max
t
REF
t
REF
Refresh period
Refresh period (L -Series)
-
16
128
-
16
128
-
-
16
128
ms
ms
-
-
Rev 0.1 / Apr’01
HYNIX [ HYNIX SEMICONDUCTOR ]
